Electrical Transport in nGe-pGaAs Heterojunctions†

Riben, A. R.; Feucht, D. L.

doi:10.1080/00207216608937891

Cited by 241 publications

(60 citation statements)

References 11 publications

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“…According to the tunneling model, which was developed for Schottky barriers, the band bending works as a barrier for carriers tunneling into interface states or dislocations, where various traps may be involved in multitunneling steps. 23 Thermally activated carriers make ͑step-wise͒ tunneling into the interface states. The values of slope ln I versus V plots at different temperatures with the corresponding values of the ideality factor ͓obtained from Eq.…”

Section: ͑7͒mentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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Section: ͑7͒mentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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“…При обратном смещении в случае резкого перехода то, что обратные ветви ВАХ на рис. 7 являются пря-мыми линиями в координатах ln(I t rev ) = f (ϕ 0 − eV ) −1/2 , согласно [18][19][20], подтверждает доминирование туннель-ного механизма токопереноса в области обратных сме-щений 0.5 < |V | < 3 B.…”

Section: рис 2 прямые ветви вольт-амперной характеристики диодовunclassified

Диоды Шоттки графит/p-SiC, полученные методом переноса нарисованной пленки графита на SiC

Солован¹,

Andrushchak²,

Мостовой³

et al. 2018

Физика И Техника Полупроводников

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Изготовлены диоды Шоттки графит/p-SiC методом переноса нарисованной пленки графита на подложку монокристаллического p-SiC. Измерены вольт-амперные (при различных температурах) и вольт-фарадные характеристики. Исследованы температурные зависимости высоты потенциального барьера и последователь-ного сопротивления диода Шоттки графит/p-SiC. Определены доминирующие механизмы токопереноса через гетеропереход при прямом и обратном смещениях. Установлено, что основными механизмами токопереноса через диод Шоттки графит/p-SiC при прямых смещениях являются многоступенчатый туннельно-рекомбина-ционный механизм и туннелирование, которое описывается формулой Ньюмена (при больших смещениях). При обратных смещениях -эмиссия Френкеля-Пулла и туннельный механизм токопереноса. Показано, что диод Шоттки графит/p-SiC можно использовать в качестве детекторов ультрафиолетового излучения, поскольку он имеет напряжение холостого хода Voc = 1.84 В и ток короткого замыкания Isc = 2.9 мА/см 2 при освещении ртутно-кварцевой лампой ДРЛ 250-3, которая находилась на расстоянии 3 см от образца.

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“…The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow. C-V data indicate an abrupt heterojuncton, while dark I-V characteristics are suggestive of a tunneling process to determine current flow in these devices in conformity with the Riben and Feucht model (Riben & Feucht, 1966). A comparison of spray deposited ITO/nSi and SnO 2 /nSi was presented by Japanese researchers (Nagatomo et al 1982).…”

Section: Sis Structures On the Base Of Silicon Crystalsmentioning

confidence: 99%

“…10a). The first channel is the following: the majority carriers from InP are tunneling through the barrier at the interface and then recombining step by step with electrons from ITO conduction band (Riben & Feucht, 1966). According to this model, the I-V characteristic slope should not depend on temperature.…”

Section: Electrical Properties Of Ito/inp Solar Cellsmentioning

confidence: 99%

“…Two regions with different behavior could be observed from this figure In the first region, at external voltages lower than 0.3 V, the I-V curves are parallel, i.e., the angle of their inclination is constant. In this case, according to (Riben & Feucht, 1966), the charge carrier transport through the potential barrier is implemented through the tunnel recombination processes in the space charge region, and the current-voltage dependence could be described by the relation:…”

Section: Electric Propertiesmentioning

confidence: 99%

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