Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures

Simaschevici, Alexei V.; Serban, D.; Bruc, L.

doi:10.5772/22755

Cited by 1 publication

(1 citation statement)

References 44 publications

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“…15 During the spraying process the gas°ow rate was controlled by the speed of the fan at the value of 10 ml/min. After the completion of spraying process, the samples were rapidly let to cool down to room temperature.…”

Section: Methodsmentioning

confidence: 99%

OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

Xing

et al. 2013

Surf. Rev. Lett.

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Thin¯lm of tin oxide (SnO 2 ) was prepared on p-type polished silicon wafer by ultrasonic spray pyrolysis technique using SnCl 4 precursor solution to fabricate nanospherical n-SnO 2 /p-Si heterojunction photoelectric device. Deposition of¯lm was achieved at 400 C substrate temperature. The self-made ultrasonic spray pyrolysis system is very cheap and convenient. The microstructural, optical and electrical properties of the SnO 2¯l m were characterized by XRD, SEM, XPS, UV-VIS spectrophotometer, four point probe and Hall e®ect measurement, respectively. The SnO 2 lm has the nanospherical particles. The electrical properties of heterojunction were investigated by I-V measurement, which reveals that the heterojunction shows strong rectifying behavior under a dark condition. The ideality factor and the saturation current density of this diode are 4.27 and 2:52 Â 10 À6 A/cm 2 , respectively. And the values of I F =I R (I F and I R stand for forward and reverse current, respectively) at 5 V is found to be as high as 248. The SnO 2 /p-Si heterojunction device exhibits obvious photovoltaic e®ect. Under an AM1.5 illumination condition, the open-circuit voltage (V oc ), short-circuit current density (J SC ),¯ll factor (FF) of the device are 150 mV, 3:9 Â 10 À3 mA/cm 2 and 20.58%, respectively. High photocurrent is obtained under a reverse bias when the crystalline quality of SnO 2¯l m is good enough to transmit the light into p-Si. Under 6.3 mW/cm 2 illumination, when the reverse bias is À5 V, the photocurrent gain is as high as 86.

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Section: Methodsmentioning

confidence: 99%

OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

Xing

et al. 2013

Surf. Rev. Lett.

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Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures

Cited by 1 publication

References 44 publications

OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

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Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures

Cited by 1 publication

References 44 publications

OBSERVATION OF NANOSPHERICAL n-SnO2/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

OBSERVATION OF NANOSPHERICAL n-SnO2/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

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OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE

OBSERVATION OF NANOSPHERICAL n-SnO₂/p-Si HETEROJUNCTION FABRICATED BY ULTRASONIC SPRAY PYROLYSIS TECHNIQUE