I-v characteristics for a structure consisting ofa silicon p-njunction and a semiconductor-insulator-semiconductor (515) structure obtained by spray deposition of 1n203:Sn02 (ITO) thin layer of on the surface of nSi have been obtained and investigated. In the case ofdirect biased pnSijunction and reverse biased nSi-ITO structure a switching from high-resistance into lowresistance state occurs. The switching may be removed by voltage decreasing or illumination with white light.I-v characteristics for each junction have been investigated and a band diagram for the pnSi-ITO structure have been proposed. This diagram allows to explain the observed current switching as a result of the double injection in nSi region.These results show that the pnSi-ITO structure possesses an S-type I-V characteristic, which may be controlled by voltage and by light. Unlike others S-type diodes in this case the illumination switches the structure from high-resistance into low-resistance state.
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