Resistivity Control of Ge Grown by GeI2 Disproportionation

Riben, A. R.; Feucht, D. L.; Oldham, W.G.

doi:10.1063/1.1703068

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Control Of Resistivity--four-point Probe and Hall1

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1966

1972

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Cited by 4 publications

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“…However, if the source doping is raised above this value, n -t y p e films may be grown with controlled doping in the range 1017-1020 cm -3. A modification of the system, described in another publication (9), has permitted the growth of higher resistivity n-type films. Previously, a troublesome donor has prevented the growth of controlled resistivity n-type Ge films having a doping concentration less than 1017 cm -3.…”

Section: Control Of Resistivity--four-point Probe and Hallmentioning

confidence: 99%

Preparation of Ge/Si and Ge∕GaAs Heterojunctions

Riben¹,

Feucht²,

Oldham

1966

J. Electrochem. Soc.

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The effect of various substrate preparation techniques is investigated in the vapor growth of germanium on Ge, Si, and normalGaAs substrates. Important differences are noted for substrates which are iodine etched in situ, chemically etched, and cleaved in situ; namely, the appearance and crystal perfection of the overgrowth as well as epitaxial junction properties, all improve in the order of the above procedures. Flat, structureless overgrowths on cleaved normalGaAs substrates and growths with negligible stacking fault densities and dislocation densities of approximately 106 cm−2 on cleaved germanium substrates are obtained. However, strain and cracking of the overgrowth, in addition to higher defect densities occur in germanium grown on cleaved silicon substrates.

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Section: Control Of Resistivity--four-point Probe and Hallmentioning

confidence: 99%