nGepGaAs Heterojunctions

Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

“…Figure 4 shows the reverse saturation current density plotted as a function of (V) 1/2 for several temperatures with some kind of a linear behavior on the semilogarithmic scale in the reverse bias voltage regime (-2 V to −0.4 V). This result indicates that the reverse saturation current density is probably limited by generation-recombination processes [29,30].…”

Monolithic crystalline multijunction solar cell development and analysis at the US Air Force research laboratory

“…The short circuit current, I sc , was approximated by integrating the product of the quantum efficiency and the solar flux spectrum between the wavelength associated with the bandgap of GaAs (~870 nm) and a 1.0 eV material (1240 nm) assuming a flat quantum efficiency of 92% and yielded 23 mA/cm 2 . The open circuit voltage, V oc , was assumed to be 3/4 of the bandgap or 0.75 V. Series and shunt resistances were approximated using results from GaAs and GaInP isotype junctions.…”

“…Recombination-generation current was described by Sah-Noyce-Shockley (SNS) [1]. Tunneling current is treated by Riben and Feucht [2], and again later by Banerjee [3], to describe the higher currents in the low voltage ranges. Each mechanism may be modeled using the photodiode model shown in Fig.…”

Thermally assisted tunneling transport in La0.7Ca0.3MnO3/SrTiOCuellar1, Sánchez-Santolino2, Varela3 et al. 2012Phys. Rev. B190110View full textAdd to dashboardCite

“…Figure 3(c) and its inset show that the saturation current density is not thermally activated in the whole temperature range as expected from Eq. (2), but there is a weak exponential temperature dependence at low temperatures pointing to the importance of a tunneling mechanism contributing to the current, 24,25 when there is not enough available thermal energy to overcome the barrier.…”