This paper presents a new SOI BCD technology at the 0.18 m node to fulfill the requirements for smart power IC technology targeted for automotive application. Built on a 1.8V and 5.0V CMOS core, there are 40V and 60V rated N/Pch MOS, with 25m .mm 2 RonA/57V BVdss having been achieved for the 40V NMOS with excellent process stability. Depletion NMOS, LV&HV diodes, 5V zener diode, high gain BJT, excellent matching well resistor, capacitors, top thick Copper Metallization option, embedded memory (OTP, CEEPROM, etc.) are also offered on this comprehensive technology platform.

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