Optimized Deep Trench Isolation for High Voltage Smart Power Process

Lerner, Ralf; Eckoldt, U.; Hoelke, A.; Nevin, Andy; Stoll, G.

doi:10.1109/ispsd.2005.1487969

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…The observed difference of the trench isolation capability with regards to voltage polarity and corner geometry has been observed already for lower voltages [15], [16]. For 900V applications single trench isolation might be sufficient with 135° corner angles and correct polarity.…”

Section: Discussionmentioning

confidence: 78%

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

Lerner¹,

Schottmann²,

Hering³

et al. 2015

FACTA U EE

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Section: Discussionmentioning

confidence: 78%

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

Lerner¹,

Schottmann²,

Hering³

et al. 2015

FACTA U EE

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“…Ref. [5] analyzed the influence of process and layout variations on the characteristic voltage. Ref.…”

Section: Introductionmentioning

confidence: 99%

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

Qian¹,

Sun²,

Han³

et al. 2011

Solid-State Electronics

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“…In this paper, we explore the possibility of filling deep trenches of 100 lm depth and 1-20 aspect ratio value by low permittivity, commercially available Spin-On dielectrics. Our choice for these dimensions is based on the literature where such deep trenches are needed for deep trench isolation and vertical power devices applications (Dragomirescu et al 1999;Glenn and Siekkinen 2000;Lerner et al 2005;Qingping et al 1998). Filling experiments are carried out on trenches, all about 100 lm deep but with widths of 3 lm (high aspect ratio trench) and 70 lm (wide trench).…”

Section: Introductionmentioning

confidence: 99%

Filling of very deep, wide trenches by BenzoCycloButene polymer

Mahfoz-Kotb¹,

Isoird²,

Morancho³

et al. 2009

Microsyst Technol

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A process for deep trench filling by BenzoCycloButene (BCB) polymer is explored. Deep trenches with 100-lm depth and different aspect ratios from 1.4 to 20 have been successfully filled by BCB. Besides, chemical mechanical polishing (CMP) of BCB is studied with the main goals of smoothing surface topography of substrate after BCB filling and removing excess BCB coating which may be necessary in some applications. Removal rate for BCB, V RR , of about 0.24 lm/min has been achieved for hard cured BCB films using acid slurry. After CMP, the BCB layer showed a roughness of about 1.36 nm (Rq, measured by atomic force microscopy, AFM).

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Optimized Deep Trench Isolation for High Voltage Smart Power Process

Cited by 8 publications

References 2 publications

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

Filling of very deep, wide trenches by BenzoCycloButene polymer

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