200V superjunction lateral IGBT fabricated on partial SOI

Tee, Elizabeth Kho Ching; Hoelke, A.; Pilkington, S. J.; Pal, D. K.; Antoniou, Marina; Udrea, F.; Abidin, Wan Azlan Wan Zainal; Yew, N. L.

doi:10.1109/ispsd.2013.6694427

Cited by 10 publications

(1 citation statement)

References 8 publications

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“…To achieve high efficiency and small chip size, on-chip HV switches with low area-specific on-resistance and low parasitic capacitances are required. Besides HV lateral SJ-MOSFETs [29], more and more HV technologies offer HV lateral SJ-LIGBTs [30]. As part of this work, both options are explored.…”

Section: B Hv-switch Typesmentioning

confidence: 99%

A Resonant One-Step 325 V to 3.3–10 V DC–DC Converter With Integrated Power Stage Benefiting From High-Voltage Loss-Reduction Techniques

Rindfleisch

Wicht

2021

IEEE J. Solid-State Circuits

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This work presents a self-timed resonant highvoltage (HV) dc-dc converter in HV CMOS silicon-on-insulator (SOI) with a one-step conversion from 100-325 V input down to a 3.3-10 V output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the HV converter is fully integrated, including an on-chip power stage, with only one external inductor (10 µH) and capacitor (470 nF). It reaches a high power density of 752 mW/cm 3 , an overall peak efficiency as high as 81%, and a light-load efficiency of 73.2% at 5 V and 50 mW output. HV loss-reduction techniques are presented and experimentally confirmed to offer an efficiency improvement of more than 32%. Integrated HV insulated gate bipolar transistors (IGBTs) are discussed and implemented as an attractive alternative to conventional integrated HV power switches, resulting in ∼20% smaller area at lower losses.

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Section: B Hv-switch Typesmentioning

confidence: 99%