Zero-Bias 50-dB Dynamic Range Linear-in-dB V-Band Power Detector Based on CVD Graphene Diode on Glass

Saeed, Mohamed; Hamed, A.; Wang, Zhenxing; Shaygan, Mehrdad; Negra, Renato

doi:10.1109/tmtt.2018.2792439

Cited by 18 publications

(13 citation statements)

References 21 publications

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“…[6][7][8][9][10][11][12][13][14][15][16] Moreover, MIG diodes are also used as building blocks to realize different circuits, such as mixers, power detectors, RF receivers etc. [17][18][19][20][21] In MIM or MIG diodes, the junction is defined by an insulating barrier layer either between two metal layers with different work functions (in the case of MIM diodes) or between one metal layer and one graphene layer (in the case of MIG diodes). The barrier layer and work-function difference dominates the rectification behavior of the MIM or MIG diodes.…”

Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

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Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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“…[ 57 ] The MIG diodes were further explored in more complex circuits with on‐chip matching, in particular three matched MIG diodes in a V ‐band, zero‐bias, linear‐in‐dB power detector scheme. [ 49,50 ] The detectors and circuits have been fabricated using chemical vapour deposition (CVD) grown graphene on a glass substrate. [ 49 ] A micrograph of the chip with the circuit occupying 0.15 mm 2 is shown in Figure 4c.…”

Section: Electronic Devices and Circuitsmentioning

confidence: 99%

“…[ 49,50 ] The detectors and circuits have been fabricated using chemical vapour deposition (CVD) grown graphene on a glass substrate. [ 49 ] A micrograph of the chip with the circuit occupying 0.15 mm 2 is shown in Figure 4c. The circuits display linear‐in‐dB characteristics with a dynamic range of at least 50 dB.…”

Section: Electronic Devices and Circuitsmentioning

confidence: 99%

“…The measured responsivity reaches 15 V W −1 at 60 GHz and 168 V W −1 at 2.5 GHz with a sensitivity of < −50 dBm (Figure 4d). [ 49 ]…”

Section: Electronic Devices and Circuitsmentioning

confidence: 99%

“…The unique features of the MIG diodes have been utilized in many circuit applications such as power detectors, [30,[49][50][51] mixers, [52,53] frequency multipliers, [54] and receivers. [55,56] In this section we explain the advantage of employing MIG diodes in these circuit applications.…”

Section: Circuitsmentioning

confidence: 99%

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Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Wang

Hemmetter

Uzlu

et al. 2021

Adv Elect Materials

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Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal–insulator–graphene (MIG) diodes over conventional metal–insulator–metal diodes are discussed with respect to relevant figures‐of‐merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene‐silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene‐based diodes have the potential to outperform conventional photodetectors in several key figures‐of‐merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application‐specific ways.

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Graphene‐Based Microwave Circuits: A Review

et al. 2022

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202108473.Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro-and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effecttransistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro-and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for highfrequency applications.

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Zero-Bias 50-dB Dynamic Range Linear-in-dB V-Band Power Detector Based on CVD Graphene Diode on Glass

Cited by 18 publications

References 21 publications

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Graphene‐Based Microwave Circuits: A Review

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