Flexible One-Dimensional Metal–Insulator–Graphene Diode

Abstract

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

“…Figure 1a shows the equivalent resistive networks of both three-and four-terminal GFETs with the intrinsic graphene channel resistance (Rch) and the extrinsic drain (Rc,d) and source (Rc,s) resistances. These include the drain and source metal-graphene contact resistances, respectively, which are currently crucial and undesirable elements impacting the RF performance of GFETs [43][44][45][46][47][48][49][50][51][52]. For the sake of simplicity, bias-independent contact resistances have been considered in the device modeling approach of this work.…”

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

“…1D MIG diodes outperform vertical MIG diodes in terms of RF cutoff frequency and current level, with a bandwidth up to 100 GHz. [ 42 ] A theoretical cutoff frequency of 2.4 THz has been deduced from the numerically determined junction capacitance and experimental values for the access resistance for a 200 µm long channel, which is achievable by standard photolithography processes. [ 42 ] The entire fabrication process is back‐end‐of‐line compatible, scalable and can be carried out in thin‐film technology, including on flexible substrates.…”

“…[ 42 ] A theoretical cutoff frequency of 2.4 THz has been deduced from the numerically determined junction capacitance and experimental values for the access resistance for a 200 µm long channel, which is achievable by standard photolithography processes. [ 42 ] The entire fabrication process is back‐end‐of‐line compatible, scalable and can be carried out in thin‐film technology, including on flexible substrates. This opens opportunities for the realization of wearable THz detectors, for example as a power supply for distributed environmental sensor networks.…”

Variable-Angle Spectroscopic Ellipsometry of Graphene-Based Films

“…Chemical vapor deposition (CVD) is a technique used for high-quality graphene production [12]. The employment of CVD technology in ultradense photonic, optoelectronic, and electronic instruments has been reported [13][14][15].…”