Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Abstract

Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal–insulator–graphene (MIG) diodes over conventional metal–insulator–metal diodes are discussed with respect to relevant figures‐of‐merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene‐silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene‐based diodes have the potential to outperform conventional photodetectors in several key figures‐of‐merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application‐specific ways.

CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

“…The research area of graphene on Si is very broad and several good review articles are published recently on the graphene/Si heterostructures based applications. [5,29,[35][36][37][48][49][50][54][55][56][57] However, these review articles are either focused on the graphene/Si heterostructures based solar cells [5,29,35,55] or PDs [36,37,54,57] or briefly focused on both. [56] Moreover, few of them are also focused on SERS based detection [49,50] and energy storage.…”

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

“…the performances of electronic/optoelectronic devices and sensors, and to add them new functionalities. Furthermore, novel/advanced device concepts exploiting vertical current transport through 2D/3D van der Waals (vdW) heterostructures have been demonstrated, [2][3][4][5] including graphene hot electron transistors [6][7][8][9] for ultrahigh frequency (THz) electronics and MoS 2 -based tunnel (Esaki) diodes for ultrafast low-power consumption digital applications. [10,11] Beside silicon, other semiconductors (including group III Nitrides and silicon carbide) have been considered as platform for graphene and 2D materials integration.…”

Terahertz Rectennas on Flexible Substrates Based on One-Dimensional Metal–Insulator–Graphene Diodes

“…As a higher bias is applied, the junction resistance of the diode decreases, thus better matching its impedance to that of the antenna, and increasing the power delivered to the diode. The matching between antenna and diode can be improved through a dedicated matching network, for example, based on graphene-based passive components, as demonstrated in previous work. , …”