A flexible electronic paper in full color is realized by plasmonic metasurfaces with conjugated polymers. An ultrathin large-area electrochromic material is presented which provides high polarization-independent reflection, strong contrast, fast response time, and long-term stability. This technology opens up for new electronic readers and posters with ultralow power consumption.

Funding Agencies|Swedish Foundation for Strategic Research; Chalmers Nanoscience and Nanotechnology Area of Advance

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Tb3+ and Yb3+ co-activated luminescent material that can cut one photon of around 483 nm into two NIR photons of around 1000 nm could be used as a downconversion luminescent convertor in front of crystalline silicon solar cell panels to reduce thermalization loss of the solar cell. The Tb3+ → Yb3+ energy transfer mechanisms in the UV–blue region in Y2O3 phosphor were studied by PL excitation spectra and time-resolved luminescence, from which the charge transfer mechanism and the cooperative transfer mechanism were identified. Tb3+ ions in the 4f75d1 state relax down to the 5D4 level and cooperatively transfer energy to two Yb3+ ions, which is followed by the emission of two photons (λ ∼ 1000 nm). It was found in the (Y0.79Tb0.01Yb0.20)2O3 sample that 37% of the Tb3+ ions at the 5D4 level transfer energy to two neighbouring Yb3+ ions by the cooperative energy transfer mechanism Tb3+ (5D4) → 2Yb3+ (2F5/2). Unfortunately, the high Yb3+ concentration leads to severe concentration quenching that significantly reduces the external quantum efficiency. Moreover, the energy of the Tb3+ 4f75d1 state can also be lost non-radiatively or transferred to the Yb3+ 2F5/2 state via the charge transfer state Tb4+–Yb2+. In conclusion, RE3+ (RE = Ce, Pr, Tb) with strong absorption in the UV region is not an appropriate sensitizer of Tb3+ in Tb3+–Yb3+ codoped downconversion phosphor.

Polycrystalline EuZn(2)Sb(2) is prepared by direct reaction of the elements. Its composition, structure, magnetism, heat capacity, and thermoelectric properties have been investigated. EuZn(2)Sb(2) crystallizes in p3m space group with a=4.4932(7) A and c=7.6170(10) A. Antiferromagnetic ordering is detected at the Neel temperature of 13.06 K, and the saturation magnetization reaches 6.87mu(B)Eu at 2 K and 7 T. Eu ion has +2 valence. Its Hall effects are characterized by a high positive Hall coefficient of +0.226 cm(3)C, proper carrier concentration of 2.77x10(19)cm(3), and high carrier mobility of 257 cm(2)V s at 300 K. This compound shows high p-type Seebeck coefficient (+122 to +181 muVK), low lattice thermal conductivity (1.60-0.40 Wm K), and high electrical conductivity (1137-524 Scm). The obtained figure of merit and powder factor reach 0.92 and 20.72 muWcm K(2), respectively. The thermoelectric properties of EuZn(2)Sb(2) are encouraging.

Polycrystalline sample of the title compound was prepared and its thermoelectric properties from 2to675K were investigated. This Zintl compound shows rather low thermal conductivity, 1.6Wm−1K−1, at room temperature. The value of its thermoelectric figure of merit ZT reaches 0.31 at 675K. Its electronic structure, calculated by ab initio methods, suggests that the electrical transport are mainly ascribe to [Zn2Sb2] framework for p-type BaZn2Sb2. The heat capacity curve at low temperature was fitted lineally to obtain Debye temperature (about 208K). It provides the authors with a host lattice for modification and optimization the thermoelectric properties through substitution and/or doping.

This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz 1/2. This letter shows how the detector performance degrades as a function of the residual carrier concentration in the graphene channel, which is an important material parameter that depends on the quality of the graphene sheet and contaminants introduced during the fabrication process. In this work, the exposure of the graphene channel to liquid processes is minimized resulting in a low residual carrier concentration. This is in part, an important contributing factor to achieve the record high GFET detector performance. Thus, our results show the importance to use graphene with high quality and the importance to minimize contamination during the fabrication process. Index Terms-Detectors, field effect transistor (FET), graphene, submillimeter wave measurements, submillimeter wave transistors, terahertz (THz).

We present a flexible terahertz (THz) detector based on a graphene field-effect transistor fabricated on a plastic substrate. At room temperature, this detector reveals voltage responsivity above 2 V/W and estimated noise equivalent power (NEP) below 3 nW/Hz at 487 GHz. We have investigated the effects of bending strain on DC characteristics, voltage responsivity, and NEP of the detector, and the results reveal its robust performance. Our findings have shown that graphene is a promising material for the development of THz flexible technology.

In this work, we report on the performance of graphene field-effect transistors (GFETs) in which the extrinsic transit frequency (f T) and maximum frequency of oscillation (fmax) showed improved scaling behavior with respect to the gate length (Lg). This improvement was achieved by the use of high-quality graphene in combination with successful optimization of the GFET technology, where extreme low source/drain contact resistances were obtained together with reduced parasitic pad capacitances. GFETs with gate lengths ranging from 0.5 µm to 2 µm have been characterized, and extrinsic f T and fmax frequencies of up to 34 GHz and 37 GHz, respectively, were obtained for GFETs with the shortest gate lengths. Simulations based on a small-signal equivalent circuit model are in good agreement with the measured data. Extrapolation predicts extrinsic f T and fmax values of approximately 100 GHz at Lg=50 nm. Further optimization of the GFET technology enables fmax values above 100 GHz, which is suitable for many millimeter wave applications.