A flexible graphene terahertz detector

Yang, Xinxin; Vorobiev, Andrei; Generalov, Andrey; Andersson, Michael; Stake, Jan

doi:10.1063/1.4993434

Cited by 64 publications

(52 citation statements)

References 28 publications

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“…Indeed, the sensitivity limit is calculated as 45 fWHz −1/2 by designing superior‐series PTE coupling: semiconducting CNT films and Bi 2 Te 3 and referring their ZT values ( ZT Semi ‐ CNT film = 0.33, ZT Mixed‐CNT film = 0.03, ZT Bi2Te3 = 1, and ZT Bi = 0.1). [ 27–29 ] In addition, as represented by the experimentally obtained minimum NEP, our CNT film PTE sensor exhibits the photodetection sensitivity comparable with those of cutting‐edge uncooled nonvacuum photodetectors [ 30–38 ] in the broadband frequency region ranging from MMW to visible light.…”

Section: Introductionmentioning

confidence: 62%

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Suzuki

Kawano

2021

Advanced Photonics Research

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As flexible wearable sensors and imagers are receiving attention from diverse social sectors, the freely attachable photothermoelectric (PTE) conversion technique should be evaluated to develop a highly usable safety sensor network. Although carbon nanotube (CNT)‐related materials should be effective, the key parameters/structures that maximize PTE conversion have not been clarified, thus hindering optimum device design and practical use. Herein, the flexible, sensitive broadband photodetection operation based on a coupling configuration between the CNT film photo/heat/electron channel and metal electrode is evaluated. Experimental PTE measurements and steady‐state thermal distribution simulations reveal that a series coupling of a p‐type CNT film channel and a highly negative Seebeck coefficient counter metal electrode facilitate superior photodetection performances than those of a parallel coupling configuration. Furthermore, subsequent device designs provide sensitive broadband photodetection from the millimeter‐wave to visible light wavelength regions with a minimum noise equivalent power of 5 pWHz−1/2 in an uncooled nonvacuum condition. Simultaneously, the mechanical flexibility of the proposed photodetector allows for its use in freely attachable sheet imager applications on curvilinear objects, and the nondestructive 3D photomonitoring of a defective intricately bent sample is demonstrated.

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Section: Introductionmentioning

confidence: 62%

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Suzuki

Kawano

2021

Advanced Photonics Research

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“…Graphene is well known example among these materials, which shows very rich physics resulting from its linear dispersion relation and massless Dirac Fermion 4 . Owing to remarkable properties such as very high mobility, large electrical and thermal conductivity, high Young’s modulus and small spin-orbit coupling (SOC), graphene became a promising candidate for wide range of applications, including high speed electronics, sensors, energy generation and storage devices as well as spintronics 5–7 . However, semi-metallic nature (gapless band structure) of pristine graphene limits its application in semiconductor electronics as zero band-gap leads a low on/off ratio in graphene-based field effect transistors (FETs) 4,8 .…”

Section: Introductionmentioning

confidence: 99%

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Gupta

Rortais

Ohshima

et al. 2019

Sci Rep

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Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (Vg) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (at Vg = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

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“…Graphene‐based detectors have rapidly progressed from devices utilizing exfoliated flakes [ 34b,47 ] to devices using large‐scale graphene that is suitable for industrial production such as CVD grown graphene [ 34c,49 ] or epitaxial graphene on SiC. [ 48 ] Furthermore flexible graphene‐based detectors [ 62 ] have been developed that may find application in novel systems, such as wearable THz spectrometers and communication devices. [ 63 ]…”

Section: Thz Detectionmentioning

confidence: 99%

2D THz Optoelectronics

Mittendorff

Winnerl

Murphy

2020

Advanced Optical Materials

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The terahertz (THz) region of the electromagnetic spectrum spans the gap between optics and electronics and has historically suffered from a paucity of optoelectronic devices, in large part because of inadequate optical materials that function in this spectral range. 2D materials, including graphene and a growing family of related van der Waals materials, have been shown to exhibit unusual optical and electrical properties that can enable diverse new applications in the THz regime. In this review, some of the unusual properties of 2D materials that make them promising for THz applications are explained, the recent work in the field of 2D THz optoelectronics is summarized, and the challenges and opportunities that await this promising new field are outlined.

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A flexible graphene terahertz detector

Cited by 64 publications

References 28 publications

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Series Photothermoelectric Coupling Between Two Composite Materials for a Freely Attachable Broadband Imaging Sheet

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

2D THz Optoelectronics

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