2D THz Optoelectronics

Mittendorff, Martin; Winnerl, Stephan; Murphy, Thomas E.

doi:10.1002/adom.202001500

Cited by 49 publications

(34 citation statements)

References 249 publications

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“…The as‐fabricated THz metasurface was projected by a 0.5 mm 2 focused THz wave from spectrometer with Apodization windowing (wavelength ranging from 0.01 to 1 mm, Advantest, TAS7500, Figure 5e) to reflect the transmission spectrum (covering 0.2 to 1.2 THz at stepsize of 1.9 GHz). Interestingly, the transmission band expanded to over 1 THz (Figure 5f) wider than previously reported matching layers, [ 41–46 ] which also suppressed secondary reflection at the interface.…”

Section: Resultsmentioning

confidence: 47%

“…Antireflection coating or signal selector played as critical components to reduce glare and light reflection loss regarding modern optic or optoelectronic systems for better optical clarity in camera lens, display screen, glasses lens, and the glass cover of photovoltaic solar cells. [ 41–45 ] Manufacturers of LCD, cathode‐ray tubes, and aerospace sensor products often added antireflection coating [ 41 ] to optical parts for prolonging service life. However, traditional methods sacrificed shape controlling ability such as spin‐coating, vacuum evaporation, etc.…”

Section: Resultsmentioning

confidence: 99%

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Multiprocess Laser Lifting‐Off for Nanostructured Semiconductive Hydrogels

Tao

Deng

Long

et al. 2021

Adv Materials Inter

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Semiconductive hydrogels denote a strategically valuable platform associated with interdiscipline fields by double advantages of metals and organisms (eco‐friendliness, structural flexibility, mixed conduction, real‐time responsiveness, scalable fabrication, and chemical stability). Nevertheless, the orthodox chemical/physical methods processing hydrogels yield planar‐like layers or rough structures without ultrafine feature size or manipulative performance, falling short of µ‐robotics, µ‐electronics, or n‐energy industries. Thereby, scaling the device's volume down and unleashing material's potential become crucially important for broadband applications. A femtosecond laser lifting‐off technique is synthesized with self‐assembly to break conventional volume/resolution limitation, enlarge the geometry‐design capacity, and desirable electricity conduction for micro/nanosituations. Low‐dimensional high‐performance nanowires, electric circuits, ultrathin interdigital capacitors, manipulative photon filters, and metasurfaces are functionalized here. The repeated experiment concludes a high‐density integration ability with a subminiature size down to 10 × 10 × 0.02 µm3, tunable electric conductivity up to 1.17 × 105 S m−1, and areal capacitance >16.2 mF cm−2 for energy storage higher than those electrochemical double‐layer ones. Large geometry capacity with nanometric resolution provides access to future‐perspective optoelectronic products, n‐energy, bioneural recordings, or interfaces of embedding conditions.

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Section: Resultsmentioning

confidence: 47%

Section: Resultsmentioning

confidence: 99%

Multiprocess Laser Lifting‐Off for Nanostructured Semiconductive Hydrogels

Tao

Deng

Long

et al. 2021

Adv Materials Inter

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“…[ 7 ] At present, vast 2D materials including graphene, black phosphorus, transition‐metal dichalcogenides (TMDs), and topological materials, have been confirmed to be used for photodetection. [ 8 ] Due to many unique advantages of 2D materials, the replacement of MCT with 2D materials is of great significance to fast response and broadband photodetection.…”

Section: Introductionmentioning

confidence: 99%

Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave

Gao

Shang

et al. 2021

Advanced Science

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Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron-hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W −1 at 635 nm, 9.38 A W −1 at 1550 nm, 9.83 A W −1 at 0.305 THz, 24.8 A W −1 at 0.250 THz, 87.8 A W −1 at 0.172 THz, and 986 A W −1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high-resolution imaging experiments. Finally, the high stability of the detector is tested by long-term deposition in air and high-temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.

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“…The analysis of the observed non-linear photocurrents give important information on the mechanisms of saturation and the behavior of the saturation parameters upon variation of the gate voltages, temperature, and radiation frequency. The obtained characteristics and the functional behavior of THz-radiation saturation is important for the development of terahertz mode-locking laser systems applying graphene as a material for the saturable absorbers, which are already widely used in the infrared/visible spectral ranges [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear intensity dependence of terahertz edge photocurrents in graphene

Candussio,

Golub,

Bernreuter

et al. 2021

Preprint

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We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm 2 results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-band optical transitions and Drude-like absorption. Both photocurrents saturate at high intensities, but have different intensity dependencies and saturation intensities. The total photocurrent shows a complex sign-alternating intensity dependence. The functional behaviour of the saturation intensities and amplitudes of both kinds of photogalvanic currents depending on gate voltages, temperature, radiation frequency and polarization is in a good agreement with the developed theory.

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2D THz Optoelectronics

Cited by 49 publications

References 249 publications

Multiprocess Laser Lifting‐Off for Nanostructured Semiconductive Hydrogels

Multiprocess Laser Lifting‐Off for Nanostructured Semiconductive Hydrogels

Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave

Nonlinear intensity dependence of terahertz edge photocurrents in graphene

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