The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202108473.Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro-and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effecttransistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro-and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for highfrequency applications.
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 µm thick Polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS2, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time. The system is explicitly designed such that the final circuit consists of a single transistor bonded to a printed circuit board (PCB), and no further passive components besides the transmission lines to attach the connectors are used. Extensive characterisation of the high electron mobility transistor has been carried out up to 300∘C in order to extract large‐ and small‐signal models. Since the system does not rely on passive tolerances and a specific model of the used transistor has been extracted, a sustainable oscillation of the design at high temperature is assured. The capabilities of the designed circuit are verified by measurements up to 230∘C, showing a promising performance with around 0 dBm output power and a phase noise of −74 dBc/Hz at 1 MHz offset at the highest characterised temperature.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.