Graphene‐Based Microwave Circuits: A Review

Saeed, Mohamed; Palacios, Paula; Wei, Muh‐Dey; Baskent, Eyyub; Fan, Chao; Uzlu, Burkay; Wang, Kun‐Ta; Hemmetter, Andreas; Wang, Zhenxing; Lemme, Max C.; Negra, Renato

doi:10.1002/adma.202108473

Cited by 39 publications

(32 citation statements)

References 133 publications

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“…2D materials-based RF devices have attracted increasing attention as promising candidates for energy-efficient terahertz communication systems with extraordinarily high data processing speed and excellent transportability. [289][290][291][292][293][294][295][296] Until now, 2D materials-based RF devices have been demonstrated with thin-film transistors (TFTs) including graphene, [297][298][299] TMDs, [300][301][302] and black phosphorus [292,303] as channel layers, which are volatile switches and consume both dynamic and static energy.…”

Section: Rf Switching Mediummentioning

confidence: 99%

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

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Hexagonal boron nitride (h-BN), a member of 2D materials, has an analogous crystal structure to graphene, yet, is an insulator having an indirect bandgap of ≈6 eV. [16] h-BN has been explored as the "ideal" substrate and excellent encapsulant [17] for other 2D materials including graphene and transition metal dichalcogenides (TMDs) due to its excellent insulating property, atomically flat surface free of dangling bonds, [18] and charged impurities, and high thermal conductivity. [19,20] Encapsulating other 2D materials with h-BN effectively protects them from local electrical and chemical environment, enabling them to manifest their theoretically expected "intrinsic" properties. In addition, h-BN has been utilized as passive components in 2D vdW electronic devices, such as gate dielectrics and tunneling barriers.Recently, h-BN is attracting intensive research interests, motivated by the variety of outstanding properties, it shows across the fields of quantum optics, [21] electronics, and optoelectronics. [22] For example, despite its indirect-bandgap nature, h-BN showed deep-ultraviolet (DUV) emission with exceptionally high internal quantum efficiency (IQE) comparable to or even higher than single-crystalline direct-bandgap semiconductors. Defects in h-BN are efficient [21,23] and stable sources for single-photon emission over a wide range of wavelengths, from near-infrared (NIR) [24] to nearultraviolet (NUV), [25] at room temperature. The giant lightmatter interaction and strong band-edge absorption offered by h-BN enable the realization of solar-blind DUV photo detection by using h-BN as the active layer where DUV photons are effectively absorbed and create electrical carriers. h-BN has also been adopted as active media for low energy electronic devices, including nonvolatile resistive switching (RS) memory and radio-frequency (RF) devices, in addition to passive components for field-effect transistors (FETs), effective diffusion barriers, and low-k interlayer dielectrics (ILDs).This article aims to review the most recent discoveries of extraordinary properties of h-BN and advancements in emerging photonic and electronic applications. Although there are several well-written review articles on h-BN, [26][27][28][29] this review article focuses on the most recent theoretical discoveries, such as the stacking sequences of h-BN and related optical properties, and the elucidation on how an indirect-bandgap h-BN exhibits strong emission as efficient as a direct-bandgap Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of st...

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Section: Rf Switching Mediummentioning

confidence: 99%

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

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“…The rise of 2D materials began with the discovery of monolayer Gr, which possesses fascinating properties, such as nearly massless Dirac fermion, 51 typical bipolar field effects, 52 high carrier mobilities, 53 high thermal conductivity, 54 and many more. While Gr is very interesting for high frequency electronics 55 and optoelectronics, 56 the absence of a band gap strongly limits its potential application in field effect transistors that require high on/off ratios 57 . In recent years, this field has expanded significantly toward semiconducting and insulating 2D materials (e.g., transition metal dichalcogenides (TMDs), hexagonal boron nitride (h‐BN)), as well as ferromagnetic (e.g., CrI 3 , Gr 2 Ge 2 Te 6 , and Fe 3 GeTe 2 ) and ferroelectric 2D materials (In 2 Se 3 and MoTe 2 ).…”

Section: D Materials For Reconfigurable Technologymentioning

confidence: 99%

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

Fei

Trommer

Mikolajick

et al. 2022

InfoMat

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As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts and materials has been the main focus of scientific research and industry. In recent years, emerging reconfigurable technologies that offer device-level run-time reconfigurability have been explored and shown the potential to enhance device and circuit functions. Two-dimensional (2D) materials possess exquisite electronic properties and provide a suitable platform for reconfigurable technology owing to their atomic-thin thickness and high sensitivity to external electrical fields. In this review, we present an intensive survey of 2D-material-based devices with diverse reconfigurability, including carrier polarity, threshold voltage control, as well as multifunctional configurations enabled by 2D heterostructures. We discuss the working principles for these devices in detail and highlight the important figures of merit for performance improvement. We further provide a forward-looking perspective on the opportunities and challenges of these reconfigurable devices based on 2D materials in the field of computing technologies.

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“…Unlike silicon, in graphene the conduction and valence bands meet at a single point, called the Dirac point [32,33]. However, this intermediate characteristic between a metal and a semiconductor, makes the GFETs not switched, therefore having electrons and hole conduction according to the modulation voltage [34].…”

Section: B Graphene Nanoribbons and Gfetmentioning

confidence: 99%

Silicon Nanowire Technologies: brief review, home-made solutions and future trends

Stucchi-Zucchi

Santos

Rufino

et al. 2022

JICS

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The silicon nanowire (SiNW) is poised to become an industry standard on the upcoming technological nodes. It presents improved current drive and modulation, minimized footprint, stackability, and a host of different beneficial characteristics. The last few years of research have focused on solving the last remaining challenges of SiNW fabrication as they roll into commercial usage. Now, novel devices, as well as channel and device stacking for 3D VLSI applications is being studied. As well as how can the SiNW geometry can be harnessed for More Than Moore materials and applications. In this review, we present a sample of the range of devices, techniques and applications of SiNW structures, alongside novel developments in the research carried out at University of Campinas. Demonstrations of JLFETs fabricated using Ga+-FIB, e-beam lithography, silicon etching in NH4OH solution, FinFETs fabricated using Ga+ lithography and strained silicon structures are shown. Promising future developments in VLSI and More Than Moore applications such as vertically stacked nanowire geometries, graphene nanoribbon devices, and MagFETs are also presented.

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Graphene‐Based Microwave Circuits: A Review

Cited by 39 publications

References 133 publications

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

Silicon Nanowire Technologies: brief review, home-made solutions and future trends

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