W-Band Graphene-Based Six-Port Receiver

Hamed, A.; Habibpour, Omid; Saeed, Mohamed; Zirath, Herbert; Negra, Renato

doi:10.1109/lmwc.2018.2808416

Cited by 13 publications

(13 citation statements)

References 14 publications

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“…Additionally, there are very simple receiver frontends with the purpose to demonstrate the ability to demodulate low data-rate, low-power AM, and amplitude shift keying (ASK) signals. [147,149] In ref. [149], four GFETs are used as power detectors combined with a passive six-port junction to form a direct conversion six-port receiver in the W-band.…”

Section: Receiversmentioning

confidence: 99%

Graphene‐Based Microwave Circuits: A Review

et al. 2022

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202108473.Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro-and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effecttransistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro-and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for highfrequency applications.

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Section: Receiversmentioning

confidence: 99%

Graphene‐Based Microwave Circuits: A Review

et al. 2022

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“…Power detectors are generally used in numerous analog wireless applications in different fields such as radar systems, Radio Frequency Identification (RFID) transceivers, or mobile communications [37] . In addition, they are one of the basic components in six-port receivers, together with local oscillators and low-noise amplifiers (LNA) [8] . The architectures of such receivers present lower complexity in comparison to other front-ends, and potentially allows fully integrated flexible RF front-end design when based on MoS2 technology.…”

Section: 𝐼 = 𝑓(𝑉) = 𝑓(𝑉mentioning

confidence: 99%

“…The mechanical flexibility and electronic transport properties of two-dimensional (2D) materials allow their integration on flexible substrates and provide a high potential for transparent bendable and wearable electronics. With a higher charge carrier mobility than organic semiconductors, 2D materials, such as graphene, black phosphorus (BP) and transition metal dichalcogenides (TMDs), are in the lead towards the realization of such applications that cannot be achieved with conventional semiconductor technologies [1][2][3][4][5][6][7][8] . Pioneered by the successful mechanical exfoliation of graphene in 2004 [9] , an ample number of articles have been published with graphene-based devices and circuits, both on rigid and flexible substrates [10][11][12][13][14][15][16][17][18] .…”

Section: Introductionmentioning

confidence: 99%

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

et al. 2022

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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 µm thick Polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS2, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

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“…The main drawback of this approach is the fact that the maximum working frequency of GFETs is strongly conditioned by their maximum oscillation frequency f max ≈ 40 GHz, limiting their use as active devices to the microwave band. Nevertheless, the use of GFET to implement subharmonic mixers [32]- [35] and signal detectors [36], [37] working in the submillimeter wave band has also been described. In this case, resistive mixer implementations are usually used to overcome the f max limitation, showing that they are able to downconvert RF signals at frequencies up to f RF = 400 GHz.…”

Section: Because Of the Low Efficiency Of Schottky Diodes Whenmentioning

confidence: 99%

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

et al. 2019

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In this work, a graphene-based single-stage high-order subharmonic mixer is presented. The device is able to up-and downconvert a signal in the 330-500 GHz frequency range, using a local oscillator signal with frequency located in the 26-40 GHz band. It exploits the strong nonlinear electromagnetic behavior exhibited by macroscopic graphene sheets when they are exposed to an incident electromagnetic wave to generate the output signal as a mixing product between the input signal and a high-order harmonic component of the local oscillator, which is internally generated without requiring additional circuitry. A prototype was implemented and its performance was experimentally characterized considering several different local oscillator multiplication orders. The maximum measured downconversion gain is around −50 dB, whereas the maximum output signal reached when working as upconverter is −43 dBm at 340 GHz and −63 dBm at 480 GHz. These values are good enough to be used in practical short-range applications. Furthermore, the measurement results are in good agreement with the theoretical predictions about graphene behavior.

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W-Band Graphene-Based Six-Port Receiver

Cited by 13 publications

References 14 publications

Graphene‐Based Microwave Circuits: A Review

Graphene‐Based Microwave Circuits: A Review

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

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W-Band Graphene-Based Six-Port Receiver

Cited by 13 publications

References 14 publications

Graphene‐Based Microwave Circuits: A Review

Graphene‐Based Microwave Circuits: A Review

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

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Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates