Voltage-Controlled Cycling Endurance of HfO_{<italic>x</italic>}-Based Resistive-Switching Memory

Abstract

Resistive-switching memory (RRAM) based on metal oxide is currently considered as a possible candidate for future non-volatile storage and storage-class memory (SCM). To explore possible applications of RRAM, the switching variability and cycling endurance are key issues that must be carefully understood. To this purpose we studied switching variability and endurance in pulsed regime for HfOx-based RRAM. We found that the resistance window, the set/reset variability and the endurance are all controlled by the maximum voltage Vstop which is applied during the negative reset operation. We demonstrate that endurance failure is triggered by a negative set event, where the resistance suddenly decreases during reset. Cycling endurance is studied as a function of time, compliance current and Vstop, allowing to develop an Arrhenius-law model which is capable of predicting device lifetime under various condition.

Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges

“…Similar conclusions can be found in recent works [14], [20], relating excessive operation voltage amplitudes with endurance reduction.…”

“…In the same manner, the device endurance strongly depends on the writing voltage characteristics [13], [14]. The use of a scheme able to guarantee the memory block operations does not ensure an optimal endurance for the devices and may cut back the useful lifetime.…”

Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier

“…When the RRAM device was fabricated on top of non-inert BE such as TiN, it should be considered for the generation of additional oxygen vacancies from the BE interface also. 12,13 Thus, when the oxygen vacancies start to move away from the filament under the larger negative bias, additionally formed oxygen vacancies nearby BE simultaneously can move toward the ruptured regime. This re-connection of the filament in the HRS was the reason why the breakdown behavior was more easily observed in the reactive BE materials.…”

“…during the reset process. 12,13 After the breakdown, the device stuck in LRS and further resistance switching could not be obtained. Based on the literature, this failure could be contributed by the amount of oxygen vacancies at the bottom electrode (BE), which was not involved in switching operation.…”

The study about the resistive switching based on graphene/NiO interfaces

“…1,2 Among the numerous oxide materials used as insulators for RRAM devices, NiO presents a number of advantages namely, low Set/Reset voltage, fast operation speed, and stable performance, among others. [3][4][5] Furthermore, its simple structure, easy preparation, and compatible CMOS-process advantages have attracted extensive attention. [6][7][8][9][10][11][12][13] Park et al fabricated NiO films on a SrTiO 3 substrate by pulsed laser deposition and found an interface effect giving rise to a resistive switching behavior that provided the experimental base for studying the switching mechanism.…”