Reconfigurable Writing Architecture for Reliable RRAM Operation in Wide Temperature Ranges

Abstract

Abstract-Resistive switching memories (RRAM) are an attractive alternative to non-volatile storage and non-conventional computing systems, but their behavior strongly depends on the cell features, driver circuit and working conditions. In particular, the circuit temperature and the writing voltage scheme become critical issues, determining resistive switching memories performance. These dependencies usually force a design time trade-off among reliability, device endurance and power consumption, and therefore imposing non-flexible functioning schemes and limiting the system performance. In this paper we present a writing architecture that ensures the correct operation no matter the working temperature, and allows the dynamic load of application oriented writing profiles. Thus, taking advantage of more efficient configurations, the system can be dynamically adapted to overcome RRAM intrinsic challenges. Several profiles are analyzed regarding power consumption, temperature-variations protection and operation speed, showing speed-ups near to 700 x compared against other published drivers.

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

“…where tis the time step for time evolution. The system equation for the problem domain can be obtained by summing (14) over all element as [26] (…”

“…In addition, a numerical scheme consisting of FVFEM-SG method and FEM is developed to analyze electrothermal coupling phenomena in large scale RRAM arrays, since self-heating becomes a significant issue as integration density increases and can lead to reliability problems, including performance degradation or even breakdown [14]- [16]. Inherently, the electrothermal processes are coupled together, making the simulation much more complicated, timeconsuming, and often beyond the capability of a personal computer (PC).…”

A Survey of Test and Reliability Solutions for Magnetic Random Access Memories

“…For other nonvolatile memory technologies, such as RRAM and PCM, some similar circuit design techniques can be used to improve their endurance and reliability. For example, García-Redondo et al [138] proposed a reconfigurable writing technique for RRAM to mitigate the write errors due to thermal variations. The read and write circuits of RRAM were revised in [139] to detect and resolve the performance degradation caused by soft errors when RRAM is used in neuromorphic systems.…”

“…Similarly, another work [148] proposed a synergistic approach that incorporated data compression, differential write, and wear-leveling to prolong the lifetime of PCM. As for RRAM devices, a dynamic writing driver architecture was proposed in [138], which can select different writing strategies depending on working temperature, data retention time, endurance requirement, and power consumption constraint. In addition, since RRAM is widely used in neuromorphic computing systems, many fault-tolerant techniques were proposed to make a tradeoff between neural network accuracy and lifetime of RRAM-based hardware platform [149]- [151].…”

Caracterización de circuitos no lineales : análisis de modelos algebraico-diferenciales mediante la teoría de grafos

“…Una de las aplicaciones que tendrán los memristores será la de crear dispositivos electrónicos de almacenamiento de información sin necesidad de aporte de energía para su mantenimiento [47,48]. Otra de las aplicaciones que se investigan actualmente está en la implementación hardware de redes neuronales artificiales.…”