While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing to investigate the relationships between programming conditions, memory window and endurance features. The experimental results are then used to perform variability-aware simulations of a RRAM-based ternary content-addressable-memory (TCAM) 128 bit macro with different operating conditions.

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