Variable-Body-Factor SOI MOSFET With Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control

Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

“…Much attention has been paid to back-gate bias scheme to control threshold voltage (V th ) for dynamic power and performance adjustment. Recently, FDSOI MOSFETs with ultrathin BOX have been reported to achieve V th control with a sufficiently large body effect factor [1].…”

Influence of the back-gate bias on the electron mobility of trigate MOSFETs

“…As can be seen, for the values of T ox and T box considered in this work, γ values higher than 0.1 can be achieved. The body factor is closely related to the ratio between the channel-to-back-gate capacitance (C bg ) and the channel-to-front-gate capacitance (C fg ) [4]. Therefore, the use of Ultra-Thin BOX is critical to get such a high γ value.…”

“…One potential solution is the back-gate biasing that modifies V T due to the body effect. However, few works deal with this effect on multi-gate MOSFETs [1]- [4]. Moreover, most of them are focused on the body factor (γ) but they do not study the implications on the transport properties, which may be nonnegligible, according to the results found for ultra-thin body SOI devices [5].…”

Silicon Single Electron Transistors Operating at Room Temperature and Their Applications

“…The device is fabricated on an SOI substrate with very thin BOX layer. The operation of the device is based on that of the variable-bodyfactor SOI MOSFET (Ohtou et al, 2004(Ohtou et al, , 2007(Ohtou et al, , 2008. The key operation of the device is to change substrate capacitance C b by modulating the substrate depletion immediately below the thin BOX layer.…”