Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

Ota, Ken‐ichiro; Saitoh, Masumi; Tanaka, Chika; Numata, T.

doi:10.7567/ssdm.2012.e-1-5

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2014

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“…Thus, the γ becomes higher for the FinFET with the small L G and the thick T Fin due to the V th roll-off. This result is consistent with the previous report on the nanowire FET with the 20-nm-thick BOX SOI [19]. Figure 11 shows the s-slope of the FinFET as a function of the L G .…”

Section: Resultssupporting

confidence: 92%

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Endo

Migita

Ishikawa

et al. 2014

JLPEA

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A threshold voltage (V th) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the V th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V th controllability in terms of the size dependence such as the gate length (L G) and the fin width (T Fin).

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Section: Resultssupporting

confidence: 92%