Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Abstract

A threshold voltage (V th) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the V th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V th controllability in terms of the size dependence such as the gate length (L G) and the fin width (T Fin).

Low‐power FinFET based boost converter design using dynamic threshold body biasing technique

“…Therefore, it leads to the requirement of low in ON state of the device and high in OFF state of the device for ultra‐low power applications. For controlling the of the device body biasing technique can be used which provides an advantage to the circuit designer to vary without tampering in its standard cell 36–40 …”

“…For controlling the V TH of the device body biasing technique can be used which provides an advantage to the circuit designer to vary V TH without tampering in its standard cell. [36][37][38][39][40] With these ideas in backdrop, we in this work propose a dynamic threshold FinFET (DTFinFET) body biasing technique-based DC-DC boost converter design targeted for TEGs with the assumption of generated voltage of 96 mV from the TEG harvested power sources. The cross-coupled charge pump topology has been considered for designing three stages of proposed DC-DC boost converter.…”