Characteristic variations of fully depleted siliconon-insulator (SOI) MOSFETs with extremely thin buried oxide are examined by device simulations. It is found, for the first time, that a SOI device with low channel impurity concentration and high substrate concentration has high immunity to both parameter variations and random dopant fluctuations (RDFs). Index Terms-Fully depleted (FD) silicon-on-insulator (SOI) MOSFET, random dopant fluctuation (RDF), thin buried oxide (BOX), variability.
The general solution to the semiclassical back-reaction equations for conformally invariant quantum free fields is found in spatially Rat homogeneous and isotropic spacetimes containing an unquantized Dimc field and cosmological coll~tanl when the ratio of the renormatization parameters @la! is g. It shows lwo-parameter families of bouncing solutions which avoid the singularity. There are several one-panmeter families without particle horizons. The stability of the solutions which have a final de Sitter stage is investigated.
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