Comprehensive Semiconductor Science and Technology 2011
DOI: 10.1016/b978-0-44-453153-7.00032-8
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Silicon Single Electron Transistors Operating at Room Temperature and Their Applications

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Cited by 3 publications
(2 citation statements)
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“…If the island is small, the energy gap between the last electron (N ) and the first empty electron (N + 1), which corresponds to the HOMO-LUMO gap of the molecule, is larger than the thermal energy k B T in the system, where k B is Boltzmann's constant and T is the temperature. Therefore, the energy for electrons to pass over the gap is not enough, resulting in the Coulomb blockade (figure 12(a)) [133].…”
Section: Coulomb Blockade Effectmentioning
confidence: 99%
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“…If the island is small, the energy gap between the last electron (N ) and the first empty electron (N + 1), which corresponds to the HOMO-LUMO gap of the molecule, is larger than the thermal energy k B T in the system, where k B is Boltzmann's constant and T is the temperature. Therefore, the energy for electrons to pass over the gap is not enough, resulting in the Coulomb blockade (figure 12(a)) [133].…”
Section: Coulomb Blockade Effectmentioning
confidence: 99%
“…regions are called single electron tunneling regions, where single electron tunneling is allowed and current flows from source to drain (figure 12(c)) [133].…”
Section: Coulomb Blockade Effectmentioning
confidence: 99%