Trade‐offs between performance and reliability in AlGaN/GaN transistors

Waltereit, Patrick; Bronner, W.; Quay, R.; Dammmann, Michael; Cäsar, Markus; Brückner, Peter; Müller, Stefan; Mikulla, M.; Ambacher, O.

doi:10.1002/pssc.201100294

Cited by 3 publications

References 7 publications

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Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Caesar

Dammann

Polyakov

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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The effect of RF stress at 10 GHz and DC stress on AlGaN/GaN HEMTs have been investigated by comparing static and transient characteristics before and after stress. It was found that the threshold voltage shifts in both tests significantly to the negative. A defect level of 0.44 eV was detected during Id-trapping analysis. Using the experimental trap data and simulating different locations of traps in the device it was established that the defective region is extended throughout the gate region. Quantitative approximations of the trap density suggest an extension of the traps into the barrier layer with a concentration of approximately 10(18) cm(-3)

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Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Caesar

Dammann

Polyakov

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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High-Gain Millimeter-Wave AlGaN/GaN Transistors

Schwantuschke

Brückner

Quay

et al. 2013

IEEE Trans. Electron Devices

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Bisi

Meneghini

Santi

et al. 2013

IEEE Trans. Electron Devices

342

207

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This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation. The article is divided in two parts within Part I. 1) We analyze how the choice of the measurement and analysis parameters (such as the voltage levels used to induce the trapping phenomena and monitor the current transients, the duration of the filling pulses, and the method used for the extrapolation of the time constants of the capture/emission processes) can influence the results of the drain current transient investigation and can provide information on the location of the trap levels responsible for current collapse. 2) We present a database of defects described in more than 60 papers on GaN technology, which can be used to extract information on the nature and origin of the trap levels responsible for current collapse in AlGaN/GaN HEMTs. Within Part II, we investigate how self-heating can modify the results of drain current transient measurements on the basis of combined experimental activity and device simulation

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Trade‐offs between performance and reliability in AlGaN/GaN transistors

Cited by 3 publications

References 7 publications

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

High-Gain Millimeter-Wave AlGaN/GaN Transistors

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

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