Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Caesar, Markus; Dammann, M.; Polyakov, V. M.; Waltereit, Patrick; Bronner, W.; Baeumler, M.; Quay, R.; Mikulla, M.; Ambacher, O.

doi:10.1109/irps.2012.6241883

Cited by 33 publications

(22 citation statements)

References 14 publications

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“…2 However, the comparison between DC and RF stress is always a matter of debate. [2][3][4][5] According to Joh et al, 3 RF stress degrades the device more severely than DC stress at the same bias point, and this effect increases with input power. The degradation has been attributed to trap formation due to hot carriers.…”

mentioning

confidence: 99%

“…Generation of traps with 0.5 eV activation energy, both due to DC and RF, has been reported by Chini et al, 4 likewise with more severe degradation observed under RF. However, data also exist that suggest that device degradation may actually be no worse or even less under RF operation, compared to DC stressing as, for example, observed by Caesar et al 5 Hence, it is essential to identify the microscopic processes involved in the conduction and degradation mechanisms of high electron mobility transistors (HEMTs) under DC and RF conditions, in particular the hot electron behavior, to justify any DC life test developed for RF reliability assessment. Electroluminescence (EL) has been used as a tool to monitor hot carriers under DC operation.…”

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confidence: 99%

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Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Brazzini

Casbon

Sun

et al. 2015

Applied Physics Letters

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Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line. However, peak electron temperature under RF occurs at high VDS and low IDS where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.

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confidence: 99%

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confidence: 99%

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Brazzini

Casbon

Sun

et al. 2015

Applied Physics Letters

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“…However, the main limitation of its performance is the trapping effect, appearing before and during its operating lifetime [2], [3], [4]. These electrically active defects will cause current delays when the gate -or drain-is switched between to different levels.…”

Section: Introducttonmentioning

confidence: 99%

Study of different algorithms and models for trapping effect extraction

Divay¹,

Masmoudi²,

Latry³

et al. 2016

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects Iike traps are a common issue on this type oftechnology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting in a measurement of a current transient at different junction temperatures. This paper presents a comparison between different extraction algorithms for trapping signatures and the possible impact of their imprecision when extracting the activation energy on measurement data. Furthermore, a more physical model for trap extraction will be presented with its limitations.

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“…DC and RF lifetesting have been compared before [5], [8], [9], [10], but attempts have not been made to distinguish the acceleration factors for several mechanisms, or scale the individual DC results to an RF application. Ref.…”

Section: Introductionmentioning

confidence: 99%

Lifetesting GaN HEMTs With Multiple Degradation Mechanisms

Paine¹,

Polmanter²,

et al. 2015

IEEE Trans. Device Mater. Relib.

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A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several simultaneous degradation mechanisms have been reported widely. The technique involves first finding DC parameters that are "signatures" of each mechanism. Then separate DC-stress lifetests are performed to find the degradation rates for the signature parameters at several temperatures, and the corresponding Arrhenius curves. Next, an RF-stress lifetest (with just one stress condition) is performed while monitoring all of the signature parameters as well as the RF performance. This is utilized to determine the "scaling factors" between the rates of change in the DC lifetests and the rates of change in the RF application. Applying these scaling factors to the original Arrhenius curves gives an "overall" Arrhenius plot for the RF application with several different lines, for the different degradation mechanisms. The technique can be extended to further degradation mechanisms, by conducting further DC and RF lifetests while monitoring appropriate signature parameters. A 1530-4388 (c)

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Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Cited by 33 publications

References 14 publications

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Study of different algorithms and models for trapping effect extraction

Lifetesting GaN HEMTs With Multiple Degradation Mechanisms

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