This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation. The article is divided in two parts within Part I. 1) We analyze how the choice of the measurement and analysis parameters (such as the voltage levels used to induce the trapping phenomena and monitor the current transients, the duration of the filling pulses, and the method used for the extrapolation of the time constants of the capture/emission processes) can influence the results of the drain current transient investigation and can provide information on the location of the trap levels responsible for current collapse. 2) We present a database of defects described in more than 60 papers on GaN technology, which can be used to extract information on the nature and origin of the trap levels responsible for current collapse in AlGaN/GaN HEMTs. Within Part II, we investigate how self-heating can modify the results of drain current transient measurements on the basis of combined experimental activity and device simulation

A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 pm substrate backside process with dry etched through-substrate vias. For the electron confinement an InO8GaO2As/lnO53Ga047As composite channel was used. The devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 x 1 06 h in air.Cut-off frequencies f, and fmax of 375 GHz were extrapolated for a 2 x 15 pm gate width device.Low-noise amplifiers with more than 1 5 dB gain in the frequency range from 192 GHz to 235 GHz were realized.

CFD (RANS based) simulations of REGA-1 experimental campaign concerning gasification of glycol in an oxygen-nitrogen mixture have been carried out. The reacting flow-field has been computed using a number of turbulence models while turbulence-chemistry interactions have been modeled using either the Eddy Dissipation Concept (EDC) or the presumed PDF approach.Two global-chemistry schemes have been used: the (HVI1) scheme for glycol gasification and the extended Jones-Lindstedt scheme. Radiation has been computed using the Discrete Ordinate Method with a comprehensive analysis concerning absorption/emission of infrared radiation by gaseous molecules as well as absorption and scattering on droplets. The CFD-predictions of the near-atomizer region have been sensitive to and strongly dependent on the sub-models used; the spray sub-model and the chemical schemes are the most * Corresponding author

We systematically investigate Al(0.22)Ga(0.78)N/GaN high electron mobility transistors with GaN cap layer thicknesses of 0, 1, and 3 nm. All samples have electron mobilities around 1700 cm2/Vs and sheet carrier concentrations around 8x10(exp 12) cm-2 as determined by Hall effect measurements. From photoreflectance measurements we conclude that the electric field strength within the AlGaN barrier increases with GaN cap layer thickness leading to a broadening of the transition peaks as determined by spectroscopic ellipsometry. The surface potential as determined by photoreflectance varies in the range between 0.585 and 0.249 eV dependent on the thickness of the GaN cap. Device results show a significant decrease in Ohmic contact resistance, an increase in ideality factor, a decrease in gate and drain leakage currents, an increase in gain, and an increase in power added efficiency with increasing cap layer thickness. Finally, devices with GaN cap show an improved direct current reliability compared to their counterparts without GaN cap