Abstract:GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects Iike traps are a common issue on this type oftechnology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting in a measurement of a current transient at different junction temperatures. This paper presents a comparison … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.