High-Gain Millimeter-Wave AlGaN/GaN Transistors

Schwantuschke, Dirk; Brückner, Peter; Quay, R.; Mikulla, M.; Ambacher, O.

doi:10.1109/ted.2013.2272180

Cited by 15 publications

(2 citation statements)

References 11 publications

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“…GaN‐based high electron mobility transistors (HEMTs) are outstanding candidates for high power RF applications 1–3 than classical III–V and Si technologies. High breakdown field (~5 MV/cm) due to large bandgap (3.4 eV), high electron mobility (~1500 cm 2 /V‐s) in the two‐dimensional electron gas (2DEG) are the advantages of GaN‐based HEMTs for high voltage and high‐frequency operation 1–3 . Several GaN‐HEMT small signal models are developed for power amplifier applications 4–6 …”

Section: Introductionmentioning

confidence: 99%

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Sengodan

Mohanbabu

et al. 2022

Int J RF Mic Comp-Aid Eng

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Nonlinearity operation and early gain suppression limit the high‐frequency operation of GaN‐HEMTs. Nonlinear transconductance and resistance drop‐off at relatively large VGS are the major sources for the nonlinear operation of the high electron mobility transistors (HEMTs). In this article, we present the In0.1Ga0.9N channel‐based HEMTs for stable transconductance operation. The device performance is evaluated for both Al0.3Ga0.7N, and In0.17Al0.83N barrier materials with silicon nitride passivation. The In0.17Al0.83N/In0.1Ga0.9N/GaN heterostructure device shows remarkable improvement in gate voltage swing than Al0.3Ga0.7N/In0.1Ga0.9N/GaN. LG 55 nm T‐gate In0.17Al0.83N/In0.1Ga0.9N HEMT exhibited 5 A/mm of maximum drain current density (IDS, max) for 1 V gate bias, 0.72 S/mm of stable transconductance (gm,max), 43.5 V of off‐state breakdown voltage (VBR), and 275/289 GHz of fT/fmax. The HEMT with AlGaN/InGaN/GaN heterostructure showed 2.81 A/mm of maximum drain current density for 1 V gate bias, 0.66 S/mm of stable transconductance, 55.3 V of VBR, and 252/263 GHz of fT/fmax. Moreover, a highest theoretical OIP3 value of 61.2 and 67.6 dBm obtained for AlGaN and InAlN barrier HEMTs, respectively. The proposed InGaN/GaN channel‐based HEMTs are more reliable for high‐frequency linear operation.

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Section: Introductionmentioning

confidence: 99%

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Sengodan

Mohanbabu

et al. 2022

Int J RF Mic Comp-Aid Eng

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“…It is thus essential to find a way to reduce this adverse effect. It has been proven that dual-gate (DG) HEMTs can deliver significantly higher power gain than common-source single gate (SG) HEMTs due to a better input-to-output isolation stemming from smaller feedback capacitance and higher output impedance [7][8][9][10]. Therefore, it is assumed that the combination of DG configuration with MIS gate structure should be a viable scheme to simultaneously realize a high power gain and good breakdown performance.…”

Section: Introductionmentioning

confidence: 99%

Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric

Gao

Zhang³

et al. 2015

Semicond. Sci. Technol.

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We have investigated dual-gate AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Si 3 N 4 as the gate dielectric by comparison with singlegate MIS-HEMTs. It is shown that the presence of the second gate induces a slight reduction in the maximum output current, transconductance and breakdown voltage, but with the advantages of 5 dB enhanced power gain and higher f T /f max . Combined with a physics-based device simulation, the breakdown characteristics of the dual-gate device are revealed to be dependent on the second gate. These results demonstrate that the incorporation of dual-gate configuration into the MIS gate is a potential alternative for GaN-based high-power and high-frequency applications.

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Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications

et al. 2021

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High-Gain Millimeter-Wave AlGaN/GaN Transistors

Cited by 15 publications

References 11 publications

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric

Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications

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High-Gain Millimeter-Wave AlGaN/GaN Transistors

Cited by 15 publications

References 11 publications

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

L G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4as the gate dielectric

Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications

Contact Info

Product

Resources

About

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

L _G 55 nm T‐gate InGaN / GaN channel based high electron mobility transistors for stable transconductance operation

Dual-gate AlGaN/GaN MIS-HEMTs using Si₃N₄as the gate dielectric