The use of a tunable midinfrared external cavity quantum cascade laser for the standoff detection of explosives at medium distances between 2 and 5 m is presented. For the collection of the diffusely backscattered light, a high-performance infrared imager was used. Illumination and wavelength tuning of the laser source was synchronized with the image acquisition, establishing a hyperspectral data cube. Sampling of the backscattered radiation from the test samples was performed in a noncooperative geometry at angles of incidence far away from specular reflection. We show sensitive detection of traces of trinitrotoluene and pentaerythritol tetranitrate on real-world materials, such as standard car paint, polyacrylics from backpacks, and jeans fabric. Concentrations corresponding to fingerprints were detected, while concepts for false alarm suppression due to cross-contaminations were presented

We present a comprehensive analysis of an external-cavity (EC) quantum cascade (QC) laser system, which is based on a coupled-mode system with the length of the EC set equal to that of the laser chip and accommodating the large difference in physical cavity length by introducing an effective speed of light for light propagating in the EC. By analyzing the rate equations and discussing the cross sections and losses of the EC QC lasers, numerical results as well as suggestions for a further optimization of the spectral tuning range of the EC system are presented. Besides, the delayed onset of the EC modes with respect to that of the internal Fabry–Perot modes in pulsed operation has been simulated using the rate equations, yielding a good agreement with the experimental data

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Articles you may be interested inDouble metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24μm Appl. Phys. Lett. 105, 121115 (2014); 10.1063/1.4896542 High peak power λ 3.3 and 3.5 μ m InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K Appl. Phys. Lett. 97, 031108 (2010); 10.1063/1.3464551 Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ 9.6 μ m Appl. Phys. Lett. 88, 201114 (2006); 10.1063/1.2205730 2.9 THz quantum cascade lasers operating up to 70 K in continuous wave

We systematically investigate Al(0.22)Ga(0.78)N/GaN high electron mobility transistors with GaN cap layer thicknesses of 0, 1, and 3 nm. All samples have electron mobilities around 1700 cm2/Vs and sheet carrier concentrations around 8x10(exp 12) cm-2 as determined by Hall effect measurements. From photoreflectance measurements we conclude that the electric field strength within the AlGaN barrier increases with GaN cap layer thickness leading to a broadening of the transition peaks as determined by spectroscopic ellipsometry. The surface potential as determined by photoreflectance varies in the range between 0.585 and 0.249 eV dependent on the thickness of the GaN cap. Device results show a significant decrease in Ohmic contact resistance, an increase in ideality factor, a decrease in gate and drain leakage currents, an increase in gain, and an increase in power added efficiency with increasing cap layer thickness. Finally, devices with GaN cap show an improved direct current reliability compared to their counterparts without GaN cap

The effect of RF stress at 10 GHz and DC stress on AlGaN/GaN HEMTs have been investigated by comparing static and transient characteristics before and after stress. It was found that the threshold voltage shifts in both tests significantly to the negative. A defect level of 0.44 eV was detected during Id-trapping analysis. Using the experimental trap data and simulating different locations of traps in the device it was established that the defective region is extended throughout the gate region. Quantitative approximations of the trap density suggest an extension of the traps into the barrier layer with a concentration of approximately 10(18) cm(-3)

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