Transport and electrically detected electron spin resonance of microcrystalline silicon before and after electron irradiation

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

“…A similar behaviour was reported after electron irradiation of undoped lc-Si:H [5,20]. The drop in dark conductivity can be understood in terms of a change of the Fermi level with the increase in the density of gap states.…”

“…To identify the silicon dangling bond as the defect that gets created upon proton irradiation, one can apply experiments like electron spin resonance (ESR) and electrically-detected ESR that have been useful for studying defect physics after electron irradiation [4,20].…”

Creation of metastable defects in microcrystalline silicon films by keV electron irradiation

“…There has been a great number of studies dealing with defect creation by electron irradiation in a-Si:H, which have to be sub-divided into two classes: experiments using energies above the threshold for the creation of Si vacancies or dangling bonds in the MeV-range (1-20 MeV) and studies employing keV electrons (1-30 keV) clearly below the threshold (see [3] for references). In the case of lc-Si:H irradiation by MeV-electrons was shown to increase sub-gap absorption and decrease the photoconductivity [4][5][6]. Here we report on a study of electron irradiation of lc-Si:H films using energies in the keV-range smaller than the threshold energy for defect creation in crystalline silicon.…”

Electron spin resonance studies of microcrystalline and amorphous silicon irradiated with high energy electrons

“…We investigated the paramagnetic defects in lc-Si:H with various structure compositions where the defect density was varied by high energy electron bombardment and subsequent annealing [14][15][16][17][18][19][20][21]. The idea is to individually enhance resonances in such a way that a de-convolution of the superposition signal becomes easier with better distinguishable ESR line parameters.…”