Ga In As ∕ Al As Sb quantum-cascade lasers operating up to 400K

Abstract

Articles you may be interested inDouble metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24μm Appl. Phys. Lett. 105, 121115 (2014); 10.1063/1.4896542 High peak power λ 3.3 and 3.5 μ m InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K Appl. Phys. Lett. 97, 031108 (2010); 10.1063/1.3464551 Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ 9.6 μ m Appl. Phys. Lett. 88, 201114 (2006); 10.1063/1.2205730 2.9 THz quantum cascade lasers operating up to 70 K in continuous wave

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

“…12 Moreover, laser operation has been reported on other material systems, i.e., AlGaAs on a GaAs substrate 13 and Al͑Ga͒Sb on InAs. 14 Devices with Sb-containing barriers on both InAs substrate [14][15][16] as well as on InP substrate [17][18][19] are promising for either increasing the electron confinement or reducing the emission wavelength, and above room temperature pulsed operation on both substrates was recently reported. 16,18 Since the realization 13 of the GaAs-based quantum cascade laser, an impressive extension of the attainable infrared frequency range has been achieved and can be operated at wavelengths as long as 160 m. 20 The design of QCLs based on GaAs/ AlGaAs can be made very flexible by varying the Al content due to naturally occurring near lattice matched material system across the full range of Al contents.…”

Investigation of Thermal Effects in Quantum-Cascade Lasers

“…These factors led to the rapid development of high temperature InGaAs-AlAsSb QCLs, albeit in pulsed mode. An InGaAs-AlAsSb QCL emitting at mu pt oa t least 400 K in pulsed mode has been reported [10]. The device was processed into a standard double channel waveguide and mounted substrate side down with no particular attention paid to optimizing the structure to improve the thermal management.…”

Design and simulation of InGaAs∕AlAsSb quantum-cascade lasers for short wavelength emission

“…3.1 µm is currently the shortest spontaneous emission wavelength observed from an intersubband device [1]. Room-temperature electroluminescence at ∼ 4.5 µm from InGaAs/AlAsSb QC structures [4] has recently been reported by Yang et al, who have also demonstrated InGaAs/AlAsSb QCLs emitting at the same wavelength with maximum operating temperatures of up to 400 K in pulsed mode [5]. Thorough investigation of the carrier dynamics in Sb-based quantum cascade structures as well as further improvements in the QCL design are required to approach the goal of achieving above-room temperature near-infrared (λ ∼ 3µm) laser emission.…”

“…The threshold current is estimated at ∼4 kA/cm 2 with a calculated maximum operating temperature of 140 K. In order to increase the modal gain G M and achieve laser emission at higher temperatures, either the local gain g or mode confinement factor Γ must be increased. In order to increase Γ, a new plasmon-enhanced waveguide was designed, based upon the approach used by Yang et al in their λ ∼4.5 µm InGaAs/AlAsSb QCL operating up to 400 K [5]. In this design, 30 periods of the active and injector regions of structure B are sandwiched between two 200 nm of In 0.53 Ga 0.47 As confinement layers doped to 1 × 10 17 cm −3 .…”