The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon

Abstract

An amorphous layer produced on a silicon substrate by ion implantation recrystallizes epitaxially during a low temperature treatment (about 500 °C). The growth rate is found to depend essentially on the kind and concentration of foreign atoms in the concentration range between 0.001 and 10 at %. For group 3 and group 5 elements a unique acceleration mechanism is found. At high concentrations the growth rate rapidly decreases due to the possible values of supersaturation during solid phase epitaxial growth.