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Articles you may be interested inRole of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metalinsulator-semiconductor structures under forward gate bias stress Appl. Phys. Lett. 105, 033512 (2014); 10.1063/1.4891532 Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance J. Vac. Sci. Technol. A 15, 3143 (1997); 10.1116/1.580859Metal-insulator-semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer J.We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO 2 /n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10-30 K in the frequency range of 10 Hz-1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO 2 /n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics. V C 2014 AIP Publishing LLC. [http://dx.

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We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.

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