Present status of solid phase epitaxy of vacuum-deposited silicon

Зотов, А. В.; Коробцов, В. В.

doi:10.1016/0022-0248(89)90170-x

Cited by 30 publications

(6 citation statements)

References 64 publications

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“…Defect etching of the sample confirms this observation. Since the crystal quality of SPE grown silicon depends on crystal orientation [29], we compared the etch pit density of five grains that extend from region I to region II in Fig. 5.…”

Section: Cleaning Efficiencymentioning

confidence: 99%

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

Höger

Schmidt

Landgraf

et al. 2013

Phys. Status Solidi A

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This study demonstrates an innovative approach to clean a polycrystalline seed layer surface for solid phase epitaxy of amorphous silicon (a-Si). The excimer laser cleaning (ELC) makes use of in situ excimer laser irradiation during the first stages of a-Si deposition leading to melting of the as deposited a-Si and parts of the seed layer. The increased diffusion in liquid silicon allows for "smearing out" of surface contamination species. After liquid phase epitaxy is finished, further a-Si is deposited and crystallized by solid phase epitaxy. Thanks to the "smearing out," the interface between the crystalline and amorphous silicon exhibits less contamination locally. SIMS measurements demonstrate a reduced carbon concentration at the seed layer surface after ELC. Numerical simulations, taking into account heat transfer and temperature dependent diffusion, support the reduction of carbon concentration. The simulations agree very well with experimental results. To get optimal solid phase growth conditions, the a-Si deposition temperature has to be below 200 8C. Above 200 8C deposition temperature, defective growth occurs resulting in poor crystallinity or even in nonepitaxial growth.

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Section: Cleaning Efficiencymentioning

confidence: 99%

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

Höger

Schmidt

Landgraf

et al. 2013

Phys. Status Solidi A

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“…Low-temperature (≤800°C) solid phase epitaxy (SPE) of a-Si by using AIC poly-Si seed layer deposited on glass substrate is a promising approach to obtain poly-Si thin films with high quality [20]. The most significant advantage of this technique is; the AIC poly-Si seed layer has large grain sizes and SPE technique is processed on this seed layer, the final grain sizes of the films are larger than the grain size of the films produced by SPC method [21].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

et al. 2019

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Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of ~200nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p + type (~2×10 18 cm -3 ). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have advantages to improve the thin film quality by the overdoping induced passivation. In this study, boron (B) and phosphorus (P) doped AIC seed layers were thicken to ~2μm by solid phase epitaxy (SPE) technique at 800°C for 3 hours under nitrogen flow in a tube furnace. During the crystallization annealing, exodiffusion of dopants was formed through the SPE film from the AIC seed layer. Optical microscope and electron back scattering diffraction technique (EBSD) were used to analyse the structural quality of the Si films. The poly-Si layer with an average grain size value of ~32µm was formed by AIC+SPE technique for P doped samples while EBSD analysis gave no results for B doped samples due to the quite deterioration on the surface of the films. AIC+SPE films were analysed in terms of structural properties by using micro-Raman Spectroscopy and X-ray diffraction systems. The results showed that the crystallinity of compressive stress formed AIC+SPE films reached up to 98.55%. Additionally, the Raman analysis pointed out that no temperature-induced stress were generated in the AIC+SPE films while compressive stress was induced by increasing the annealing duration for doped AIC film. For all samples, the preferred orientation was <100>, and the crystallite size up to 44.4nm was formed by phosphorus doping of AIC films. The doping efficiency was determined by time-of-flight secondary ion mass spectroscopy for doped samples. A graded n + n doping profile was obtained by exo-diffusion of phosphorus from the overdoped seed layer during the epitaxial thickening while boron doping of SPE film has failed with exo-diffusion of boron from AIC seed layer into SPE film. Finally, high-quality n + n type poly-Si films were fabricated on glass substrate by using AIC+SPE technique.

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“…One of the most promising techniques for device grade SOI suitable for three-dimensional integrated circuits is Epitaxial Lateral Overgrowth (ELO), which has been realised using Chemical Vapour Deposition (CVD) [1], Solid Phase Epitaxy (SPE) [2], and Liquid Phase Epitaxy (LPE) [3][4][5][6]. One of the most promising techniques for device grade SOI suitable for three-dimensional integrated circuits is Epitaxial Lateral Overgrowth (ELO), which has been realised using Chemical Vapour Deposition (CVD) [1], Solid Phase Epitaxy (SPE) [2], and Liquid Phase Epitaxy (LPE) [3][4][5][6].…”

mentioning

confidence: 99%

“…One of the most promising techniques for device grade SOI suitable for three-dimensional integrated circuits is Epitaxial Lateral Overgrowth (ELO), which has been realised using Chemical Vapour Deposition (CVD) [1], Solid Phase Epitaxy (SPE) [2], and Liquid Phase Epitaxy (LPE) [3][4][5][6]. The disadvantage of these techniques for SOI circuits is their low overgrowth width of only about 20 #m in the case of CVD [1] and 7 #m in the case of moderately doped SPE materials [2]. The disadvantage of these techniques for SOI circuits is their low overgrowth width of only about 20 #m in the case of CVD [1] and 7 #m in the case of moderately doped SPE materials [2].…”

mentioning

confidence: 99%

MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

et al. 1992

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Present status of solid phase epitaxy of vacuum-deposited silicon

Cited by 30 publications

References 64 publications

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate

MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

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