MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

Bergmann, Ralf B.; Czech, E.; Silier, I.; Nagel, N.; Bauser, E.; Queisser, H. J.; Zingg, R.P.; Höfflinger, B.

doi:10.1007/bf00348140

Cited by 12 publications

(1 citation statement)

References 13 publications

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“…ELO technique is used mainly to reduce defect density in lattice mismatched heteroepitaxial systems (see [3] for a review). However, homoepitaxial version the ELO technique also finds its practical application in production of silicon-on-insulator structures [4], MOS transistors [5], field effect transistors [6], solar cells [7], pressure sensors [8] and for three-dimensional device integration [9]. Usually, dielectric films (SiO 2 , Si 3 N 4 , etc.)…”

Section: Introductionmentioning

confidence: 99%

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Dobosz

Żytkiewicz²,

Piotrowski

et al. 2003

Cryst. Res. Technol.

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Liquid phase epitaxial lateral overgrowth of GaAs layers on GaAs substrates masked by tungsten films was studied. We show that at our growth conditions perfect growth selectivity was obtained, so the layers started growing from the openings cut in the mask only. However, serious damage of the mask during epitaxial growth was observed. As this deteriorates crystallographic quality of the layers a procedure was elaborated to eliminate degradation of the tungsten film by the melt. In particular, reduction of growth temperature and deposition of Au/Zn wetting layers between tungsten film and the GaAs substrate were found important to avoid degradation of the mask and for successful lateral growth of the layers. Tungsten masked GaAs substrates were then used for lateral overgrowth of GaAs by liquid phase electroepitaxy. Preliminary results are presented showing that application of electrically conductive tungsten mask, which allows a direct DC current flow from the melt to the substrate, results in much wider and thinner electroepitaxial layers than those grown on the substrates coated by insulating film.

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