Epitaxial Lateral Overgrowth of Semiconductors

Żytkiewicz, Z. R.

doi:10.1007/978-3-540-74761-1_30

Cited by 7 publications

(5 citation statements)

References 98 publications

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“…At this point two things occur simultaneously, Si oxidizes forming a thin layer of SiO x (Figure C), whereas the epitaxial Cu seeds grow (Figure C) eventually coalescing into an epitaxial film (Figure D). Growth and coalescence of the Cu film on top of SiO x is analogous to the epitaxial lateral overgrowth technique used in chemical vapor deposition and liquid phase epitaxy processes . Epitaxial lateral overgrowth reduces strain from lattice mismatch giving epitaxial films, which have fewer number of dislocations and higher quality than those grown directly on the substrate …”

Section: Resultsmentioning

confidence: 99%

“…Growth and coalescence of the Cu film on top of SiO x is analogous to the epitaxial lateral overgrowth technique used in chemical vapor deposition and liquid phase epitaxy processes . Epitaxial lateral overgrowth reduces strain from lattice mismatch giving epitaxial films, which have fewer number of dislocations and higher quality than those grown directly on the substrate …”

Section: Resultsmentioning

confidence: 99%

“…Growth and coalescence of the Cu film on top of SiO x is analogous to the epitaxial lateral overgrowth technique used in chemical vapor deposition 49 and liquid phase epitaxy processes. 50 Epitaxial lateral overgrowth reduces strain from lattice mismatch giving epitaxial films, which have fewer number of dislocations and higher quality than those grown directly on the substrate. 50 The interfacial oxide layer which forms during deposition is beneficial in that it allows for simple epitaxial lift-off of the Cu film to produce flexible single crystal-like Cu foils.…”

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

“…50 Epitaxial lateral overgrowth reduces strain from lattice mismatch giving epitaxial films, which have fewer number of dislocations and higher quality than those grown directly on the substrate. 50 The interfacial oxide layer which forms during deposition is beneficial in that it allows for simple epitaxial lift-off of the Cu film to produce flexible single crystal-like Cu foils. This is similar to our previous study on the epitaxial lift-off of gold foils.…”

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

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Electrodeposited Epitaxial Cu(100) on Si(100) and Lift-Off of Single Crystal-like Cu(100) Foils

Hull

Switzer

2018

ACS Appl. Mater. Interfaces

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A two-step potential electrodeposition technique is described which gives epitaxial films of Cu(100) on n-Si(100). Nucleation of epitaxial seeds occurs at −1.5 VAg/AgCl, whereas the film is grown at −0.5 VAg/AgCl. Cu deposition occurs with a Faradaic efficiency of 82.0% as determined spectrophotometrically. Epitaxy is achieved through a 45° in-plane rotation of Cu with respect to Si, which is shown by X-ray analysis. The 45° rotation reduces the lattice mismatch from −33.43% for an unrotated film to −5.86% for a 45° rotated film. Mosaicity, as determined via X-ray rocking curves, decreases with increasing thickness, going from a full width at half maximum of 3.99° for a 30 nm thick film to 1.67° for a 160 nm thick film. This translates to an increasing quality of epitaxy with increasing thickness. High resolution transmission electron microscopy imaging shows an amorphous SiO x interlayer between Cu and Si. Etching of SiO x with 5% HF allows epitaxial lift-off of the copper film, giving single crystal-like Cu(100) foils. Cu(100) films and single crystal-like foils have potential to be used as catalysts for CO2 reduction, substrates for technologically important materials like spintronic multilayer magnetic stacks and high temperature superconductors, and as active surfaces toward galvanic replacement by platinum group elements. Additionally, the foils could be used as single crystal-like substrates for flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

See 2 more Smart Citations

Electrodeposited Epitaxial Cu(100) on Si(100) and Lift-Off of Single Crystal-like Cu(100) Foils

Hull

Switzer

2018

ACS Appl. Mater. Interfaces

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“…One of the approaches useful to suppress the dislocation content is the epitaxial lateral overgrowth (ELO), which has been successively applied for other semiconductor materials (GaN, GaAs, etc.) [52]. It consists of filtering dislocations by promoting lateral growth from a substrate that is partly covered by an appropriate mask.…”

Section: Some Facets Of Synthetic Diamond Crystalsmentioning

confidence: 99%

The Many Facets of Diamond Crystals

Palyanov

2018

Crystals

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This special issue is intended to serve as a multidisciplinary forum covering broad aspects of the science, technology, and application of synthetic and natural diamonds. This special issue contains 12 papers, which highlight recent investigations and developments in diamond research related to the diverse problems of natural diamond genesis, diamond synthesis and growth using CVD and HPHT techniques, and the use of diamond in both traditional applications, such as mechanical machining of materials, and the new recently emerged areas, such as quantum technologies. The results presented in the contributions collected in this special issue clearly demonstrate that diamond occupies a very special place in modern science and technology. After decades of research, this structurally very simple material still poses many intriguing scientific questions and technological challenges. It seems undoubted that diamond will remain the center of attraction for many researchers for many years to come.

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