In this work, polycrystalline silicon (poly‐Si) thin films were fabricated by aluminum induced crystallization (AIC) technique. SiNx, deposited as a function of NH3/SiH4 ratio, and AZO (Al‐doped ZnO) films on glass were used as a buffer layer between glass and Si film. The effect of buffer layer content on the crystallinity of poly‐Si thin films was studied by Raman analysis which shows that fully crystallization without stress was achieved for all samples. Moreover, the preferred crystalline orientation and crystallite size of films were deduced by X‐ray diffraction (XRD) analysis. The preferred orientation is <100> as independent from the buffer layer content while the crystallite sizes increase up to 48.5 nm by increasing the amount of SiH4. The electrical properties of the films were carried out by four point probe and current–voltage (I–V) analysis. Both techniques demonstrated that the resistivity of the SiNx‐based samples is around 0.1 Ωcm. The grain size analysis was accomplished by electron back scattering diffraction (EBSD) measurements. The grain size up to 25 µm was achieved as observed from EBSD images. The results show that the fabrication parameters of SiNx and AZO buffer layers have the great effects on the crystallography of poly‐Si films.
Wide bandgap perovskites are being widely studied in view of their potential applications in tandem devices and other semitransparent photovoltaics. Vacuum deposition of perovskite thin films is advantageous as it allows the fabrication of multilayer devices, fine control over thickness and purity, and it can be upscaled to meet production needs. However, the vacuum processing of multicomponent perovskites (typically used to achieve wide bandgaps) is not straightforward, because one needs to simultaneously control several thermal sources during the deposition. Here a simplified dual-source vacuum deposition method to obtain wide bandgap perovskite films is shown. The solar cells obtained with these materials have similar or even larger efficiency as those including multiple A-cations, but are much more thermally stable, up to 3500 h at 85 °C for a perovskite with a bandgap of 1.64 eV. With optimized thickness, record efficiency of >19% and semitransparent devices with stabilized power output in excess of 17% are achieved.
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