Thermal annealing behaviour of Si/SiO2 structures

Lifshits, V.G.; Kaverina, I.G.; Коробцов, В. В.; Саранин, А. А.; Зотов, А. В.

doi:10.1016/0040-6090(86)90092-1

Cited by 12 publications

(11 citation statements)

References 14 publications

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“…In addition, we observed in all noncalcined samples the bands associated with the presence of OH groups. In addition, we can note that "Peak 3" corresponds to the symmetrical elongation of the Si-OH bond [22] "Peak 5" to the deformation of the OH bonds of the adsorbed water [22] and "Peak 7" to the overlap of the elongation peak of the OH hydrogen bond from water molecules Before and after thermal treatment, all SiNPs show the bands associated with the movement of oxygen in the SiO 2 network: the swing "Peak 1" [22], symmetrical elongation "Peak 2" [22] and asymmetrical elongation "Peak 4" [22], as well as the shoulder at approximately 1200 cm −1 , which is generally interpreted as an additional signature of the amorphous SiO 2 network [17]. Thermal treatment causes displacement of the main peak at about 1100 cm −1 "Peak 4" to a higher wavenumber: 1059-1081, 1047-1078 and 1068-1079 cm −1 for SiNP10:YEu, SiNP50:YEu and SiNP100:YEu, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Before and after thermal treatment, all SiNPs show the bands associated with the movement of oxygen in the SiO 2 network: the swing “Peak 1” [ 22 ], symmetrical elongation “Peak 2” [ 22 ] and asymmetrical elongation “Peak 4” [ 22 ], as well as the shoulder at approximately 1200 cm −1 , which is generally interpreted as an additional signature of the amorphous SiO 2 network [ 17 ]. Thermal treatment causes displacement of the main peak at about 1100 cm −1 “Peak 4” to a higher wavenumber: 1059–1081, 1047–1078 and 1068–1079 cm −1 for SiNP10:YEu , SiNP50:YEu and SiNP100:YEu , respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, thermal treatment is usually applied to remove unwanted species. This step may alter the structure of the silica, such as favoring SiO 2 condensation in a three-dimensional network leading to a more organized structure after decreasing the concentration of silanol groups (Si-OH) [17][18][19][20]. The study of the influence of thermal treatment at 900 • C for 5 h on their different properties is presented and discussed.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Size and Thermal Treatment on the Photoluminescent Properties of Europium-Doped SiO2 Nanoparticles Prepared in One Pot by Sol-Gel

et al. 2021

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Europium (Eu)-doped silica nanoparticles have attracted great interest for different applications, in particular in biomedicine as biosensors or for tissue regeneration. Sol-gel is the most common process used to prepare those particles, with size varying from tens to hundreds of nanometers. In this article, we focus our attention on the comparison between two commonly used sol-gel derived methods: reverse microemulsion (for particles smaller than 100 nm) and Stöber method (for particles larger than 100 nm). Europium concentration was varied between 0.2 and 1 mol%, and the nanoparticle diameters were 10, 50 and 100 nm. The link between the local environment of europium ions and their optical properties was investigated and discussed. Using Transmission Electron Microscopy, nitrogen sorption, X-ray diffraction, Fourier-Transform Infra-Red and pulsed doubled Nd:YAG laser, we confirmed that fluorescence lifetime was improved by thermal treatment at 900 °C due to the elimination of aqueous environment and modification of structure disorder. The size of nanoparticles, the amount of europium and the thermal treatment of obtained materials influence the emission spectra and the decay curves of Eu3+.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Effect of Size and Thermal Treatment on the Photoluminescent Properties of Europium-Doped SiO2 Nanoparticles Prepared in One Pot by Sol-Gel

et al. 2021

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“…Finally, a strong band around 1100 cm −1 (labeled “4”) is assigned to the Si–O–Si asymmetric stretching mode where the bridging oxygen atoms move horizontally in to the Si–O–Si plane [ 41 , 42 , 43 , 44 , 45 ]. In addition, the shoulder at about 1200 cm −1 is generally interpreted as a sign of the amorphous network of SiO 2 [ 30 ].…”

Section: Resultsmentioning

confidence: 99%

“…Finally, the heat treatment effect on the photoluminescence properties of the materials was investigated by annealing all samples at 900 °C. The thermal treatment of the materials has some significant effects on the silica structure, such as promoting the SiO 2 condensation in the three-dimensional network which lead to more organized structure after decreasing of the silanol group concentration (Si–OH) [ 30 , 31 , 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Europium-Doped Sol-Gel SiO2-Based Glasses: Effect of the Europium Source and Content, Magnesium Addition and Thermal Treatment on Their Photoluminescence Properties

et al. 2018

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Rare-earth doped silica-based glasses lead the optical materials due to their tailorable spectroscopic and optical properties. In this context, we took advantage of the sol-gel process to prepare various Eu-doped silica glasses to study their luminescent properties before and after annealing at 900 °C. The effect of magnesium on these properties was studied in comparison with Mg-free-glass. Using TEM, nitrogen sorption, XRD and FT-IR, we confirmed that the magnesium modifies the glass structure and the thermal treatment eliminates the aqueous environment, modifying the structure ordering. The emission spectra and the decay time curves show the advantages of the Mg addition and the annealing on the photoluminescent properties.

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Elucidating the Role of Water‐Related Traps in the Operation of Polymer Field‐Effect Transistors

Iqbal

Waldrip

et al. 2021

Adv Elect Materials

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Conjugated polymers have gained momentum as serious contenders for next‐generation flexible electronics, but their susceptibility to water represents a major problem. Atmospheric water is ubiquitous and its inadvertent diffusion into polymeric devices generates charge carrier traps, reducing their performance and stability. A good understanding of the physical processes associated with the presence of water is therefore necessary in order to be able to suppress the related trapping events and enable stable, high‐performance devices. Here, evidence is shown that water introduces traps in the bandgap of organic semiconductors and the impact of these traps on the electrical properties of polymer organic field‐effect transistors (OFETs) based on indacenodithiophene‐co‐benzothiadiazole (IDT‐BT) is investigated. Monitoring device parameters and the trap density of states (t‐DOS) during moisture extrication reveals the existence of two types of water‐related traps: shallow traps originating from water inhabiting the voids of the polymer film and deeper traps arising from chemisorbed water present at the dielectric/polymer interface. A trap passivation method based on flame‐annealing is introduced to eliminate the interfacial traps. As a result, stable OFETs, with threshold voltage shifts less than ΔVth = −0.3 V and constant mobilities (<10% variation) after three months of storage, are fabricated.

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Thermal annealing behaviour of Si/SiO2 structures

Cited by 12 publications

References 14 publications

The Effect of Size and Thermal Treatment on the Photoluminescent Properties of Europium-Doped SiO2 Nanoparticles Prepared in One Pot by Sol-Gel

The Effect of Size and Thermal Treatment on the Photoluminescent Properties of Europium-Doped SiO2 Nanoparticles Prepared in One Pot by Sol-Gel

Europium-Doped Sol-Gel SiO2-Based Glasses: Effect of the Europium Source and Content, Magnesium Addition and Thermal Treatment on Their Photoluminescence Properties

Elucidating the Role of Water‐Related Traps in the Operation of Polymer Field‐Effect Transistors

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