A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface

Photoemission study of the SiO2 conversion mechanism to magnesium silicate

“…3, where the predominant species desorbing from the surface at 300°C is Mg with a smaller contribution from MgO. The desorption of metallic Mg from the surface is in agreement with the work of Galkin et al 16 which suggest that room temperature deposition of Mg onto Si initially results in the formation of silicide islands while continued deposition results in the growth of metallic Mg on top of these island structures. Other studies 18 have shown that metallic Mg will desorb from the Si surface at temperatures above 200°C.…”

“…The thermal instability of Mg silicide has previously been reported. 12,16 The reduction in the SiO 2 peak area from 17% to 10% of the total signal is consistent with the loss of oxygen from the surface during Mg silicide formation but there is no discernable shift in the peak position of the silicon oxide indicating that after this anneal, the silicon within the oxide is predominantly in the Si 4+ oxidation state. The Mg 2p spectrum in Fig.…”

Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

“…To grow sample B, a large dose of Mg with thickness t Mg ¼ 21.3 nm was deposited at a rate of 0.71 nm/ min onto a slightly heated (40 C T 60 C) surface Si(111). According to our previous experiments [19,21], under these conditions the bulk cubic Mg 2 Si phase (c-Mg 2 Si) grows. For sample C, three portions of Mg (2 nm each) were deposited at RT onto a clean Si(111) surface, and DRS measurements were taken after each deposition.…”

In-situ formation of magnesium silicide nanoparticles on the surface of the hydrogenated silicon films

“…1, left) allows to alternate in-situ PECVD of Si:H thin films, vacuum evaporation from tungsten boat and hydrogen plasma treatment. For the deposition of Si:H thin films we used 4.5 % of silane in hydrogen mixture (flow rates: hydrogen 50 sccm and silane 2,36 sccm), pressure of gasses during the deposition 30 Pa, deposition temperature 220 °C, RF power 18 W for glow discharge excitation at the industrial frequency 13.56 MHz (size of electrode: 62 × 62 mm 2 , distance of electrodes: 32 mm). The thickness of evaporated Mg is controlled by the sensor.…”