Rapid thermal annealing of high dose arsenic-implanted silicon

Simulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain

“…2 the results of simulation for ion-implanted arsenic redistribution after rapid thermal annealing are shown. The appropriate experimental data were taken from [20]. The arsenic implantation energy FIG.…”

“…Calculated arsenic depth profile before and after annealing (continuous lines). Stars mark the experimental data [20]. Dashed line marks the point defect distribution.…”

“…The parameters of the ion spatial distribution were R p = 0.0644 µm, R p = 0.023 µm, S k = 0.4, y = 0.0173 µm [13]. After implantation the rapid annealing was carried out at a temperature of 1100 • C during 10 s. In simulation of annealing the following values of the parameters that describe the impurity atom diffusion were used: D i = 3.36 × 10 −6 µm 2 /s, β 1 = 1.049 and β 2 = 0.105 for arsenic [20]; D i = 1.517 × 10 −5 µm 2 /s and β 1 = 1.8189 [23] for boron. The values obtained in the one-dimensional model of ion-implanted arsenic redistribution were used in the simulation to account for the nonuniformity of the point defect distribution and the deviation of the defect concentration from thermal equilibrium in the case of rapid thermal annealing.…”