Simulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain

Velichko, O. I.; Dobrushkin, Vladimir A.; Muchynski, A.N; Цурко, В. А.; Zhuk, V. A.

doi:10.1006/jcph.2002.7029

Cited by 7 publications

(5 citation statements)

References 19 publications

(35 reference statements)

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“…When complemented by molecular-dynamics method [14] or reaction-diffusion computational approach [29] of simulating defects propagation, our approach can be useful in designing close to reality computing circuits based on travelling defects and clusters of defects. This will be a topic of future studies to find what exact structure of defect, localisation or dislocation [8,21,24] corresponds corresponds to gliders and still lifes.…”

Section: Discussionmentioning

confidence: 99%

Game of life on phyllosilicates: Gliders, oscillators and still life

Adamatzky

2013

Physics Letters A

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A phyllosilicate is a sheet of silicate tetrahedra bound by basal oxygens. A phyllosilicate automaton is a regular network of finite state machines -silicon nodes and oxygen nodes -which mimics structure of the phyllosilicate. A node takes states 0 and 1. Each node updates its state in discrete time depending on a sum of states of its three (silicon) or six (oxygen) neighbours. Phyllosilicate automata exhibit localizations attributed to Conway's Game of Life: gliders, oscillators, still lifes, and a glider gun. Configurations and behaviour of typical localizations, and interactions between the localizations are illustrated.

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Section: Discussionmentioning

confidence: 99%

Game of life on phyllosilicates: Gliders, oscillators and still life

Adamatzky

2013

Physics Letters A

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“…We have a more complicated situation for the radiation-enhanced diffusion of phosphorus atoms. Indeed, in [22,23] simulation of phosphorus redistribution during proton bombardment of doped silicon substrates was carried out. The experimental data of [17] were used for comparison.…”

Section: Preliminary Studies Of the Radiation-enhanced Diffusionmentioning

confidence: 99%

“…Taking into account [19,20], one can conclude that the vacancies are rather the point defects responsible for the RED of phosphorus, whereas nonequilibrium silicon self-interstitials provide boron diffusion. Unfortunately, in [22,23] an approximate analytical solution was used to calculate the point defect distribution. Therefore, it is reasonable to investigate the radiation-enhanced diffusion of phosphorus atoms more thoroughly.…”

Section: Preliminary Studies Of the Radiation-enhanced Diffusionmentioning

confidence: 99%

“…For simulation of the RED of phosphorus atoms within the framework of the pair diffusion mechanism we use the experimental data of [17] similar to investigations of [22,23]. However, in contrast to [22] another set of the data was chosen, namely, the phosphorus concentration profiles obtained for different values of proton bombardment energy.…”

Section: Diffusion Due To the Formation Migration And Dissociation Of...mentioning

confidence: 99%

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Radiation-enhanced diffusion of impurity atoms in silicon layers

Velichko¹

2014

Preprint

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Modeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment in a hydrogen-containing plasma with addition of a diffusant has been carried out. It follows from the results obtained that the radiation-enhanced diffusion occurs by means of formation, migration, and dissociation of "impurity atom -silicon self-interstitial" pairs being in a local thermodynamic equilibrium with substitutionally dissolved impurity atoms and nonequilibrium point defects generated due to external irradiation.The resulting value of the average migration length of nonequilibrium silicon selfinterstitials decreases from 0.19 µm for proton energy of 140 keV to 0.09 and 0.08 µm for energies of 110 and 80 keV, respectively. The decrease of the average migration length with the proton energy can be due to the interaction of silicon self-interstitials with the vacancies generated at the surface or with the defects formed in the phosphorus implanted region.Based on the pair diffusion mechanism, a theoretical investigation of the form of impurity profiles that can be created in thin silicon layers due to the radiation-enhanced diffusion was carried out. It is shown that depletion of the uniformly doped silicon layer occurs during plasma treatment except for the silicon -insulator interface where a narrow region with a high impurity concentration is formed. The results of calculations give a clear evidence in favor of further investigation of various doping processes based on the radiation-enhanced diffusion, especially the processes of plasma doping, to develop a cheap method for the formation of strictly assigned impurity distributions in the local semiconductor domains.

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“…In ref. [13] coupled diffusion of impurity atoms and point defects under nonequilibrium conditions are investigated. In addition, the proposed model describes a simultaneous radiation enhanced diffusion of several dopants in basic material.…”

Section: Introductionmentioning

confidence: 99%

The chemical interaction charged particles with target material under surface treatment of metal with particle beam

Parfenova

Knyazeva

2022

Z Angew Math Mech

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The paper presents a nonlinear coupled nonisothermal model of the process of material implementation into the target surface under conditions of surface treatment by a particle beam in the form of one or few consecutive pulses. The model takes into account the interaction of impurity diffusion, heat propagation, and mechanical disturbances, as well as the chemical reaction between the introduced impurity and the target material. The problem is solved numerically using an implicit symmetric difference scheme of the second‐order approximation in time and spatial coordinates. The results of solution are obtained for different time intervals. It was found that the interaction of different processes leads to the appearance of distortions in the front of waves. The distributions of temperature and impurity concentration have a wave character. The increment of the reaction product in the dynamics for different numbers of pulses is presented. The interaction mechanisms of the studied processes do not change and do not depend on the number of pulses. However, a more complicated picture is observed under treatment by several successive pulses due to the appearance of new extremes and distortions.

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Simulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain

Cited by 7 publications

References 19 publications

Game of life on phyllosilicates: Gliders, oscillators and still life

Game of life on phyllosilicates: Gliders, oscillators and still life

Radiation-enhanced diffusion of impurity atoms in silicon layers

The chemical interaction charged particles with target material under surface treatment of metal with particle beam

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