An amorphous layer produced on a silicon substrate by ion implantation recrystallizes epitaxially during a low temperature treatment (about 500 °C). The growth rate is found to depend essentially on the kind and concentration of foreign atoms in the concentration range between 0.001 and 10 at %. For group 3 and group 5 elements a unique acceleration mechanism is found. At high concentrations the growth rate rapidly decreases due to the possible values of supersaturation during solid phase epitaxial growth.
At sufficiently low temperatures disorder production during ion implantation can be described in each case by the model of deposited elastic energy. With increasing temperature nucleation and segregation of defects become significant. By Rutherford backscattering technique with a high depth resolut,ion arrangement kinetics of defect nucleation are observed in dependence on temperature, ion mass, and presence of foreign atoms.Bei geniigend tiefen Temperaturen ist die Strahlenschadenserzeugung bei der Ionenimplantation in jedem Fall durch die deponierte elastische Energie beschreibbar. Mit steigender Implantationstemperatur gewinnen Nukleations-und Segregationseffekte an Bedeutung. Mit Hilfe der Rutherford-Ruckstreuung wird bei hoher Tiefenauflosung die Kinetik der Schadenserzeugung in Abhgngigkeit von Temperatur, Ionenmasse, und Fremdatombeimengungen im Target untersucht.
With a calorimetric set‐up the energy is measured, which is accumulated in a silicon crystal during the amorphization of a surface layer by ion implantation. A value of E = (0.20 ± 0.02) eV per lattice atom is obtained and its relation to the recrystallization process is discussed.
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