Kinetics of furnace annealing of As-implanted silicon

The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon

“…is very small. As we have measured by a calorimetric set-up the crystallization energy is about 0.2 eV/atom [26]. This value has been observed during amorphization.…”

“…These processes are assumed for As, As/Ga, and Ge of high concentrations. Indications for these new phases are changes in the lattice position of the incorporated atoms, as they have been observed for arsenic [13]. It must be mentioned that in (111) oriented crystals the formation of highly twinned layers is already possible at low temperatures (about 500 "C).…”

“…Further, in a number of works it has been shown that elements of group 3 and group 5 of the Periodic Table accelerate the recrystallization [a, 5,8 to 111, while Kennedy et al [12] have found a retardation of the process by contaminations of atoms like 0, N, and C or inert gases. We have shown in a recent publication [13] a highly nonmonotonic variation of the growth rate for As concentrations between 0.001 and 10 at%. Further, it has been shown that during epitaxial annealing it is possible to produce highly supersaturated layers with foreign atom concentrations more than one order of magnitude beyond the solubility limit at any temperature of the solid material.…”

“…1 regrowth rates are shown for Ge, C, and Sn. The recently reported values [13] for silicon self-implantation (dashed line) and for As (full line) are presented for comparison. For Ge as well as for Sn no redistribution of the dopants takes place in implanted; --annealed a t 489 "C for 25 min determination of the actual concentration of foreign atoms except boron is very difficult, because of the strong redistribution of these elements in the amorphous region.…”