Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells

Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

“…However, boron-oxygen complexes cause a serious problem of light-induced degradation in solar cells [4] since they act as recombination centers of photocarriers. Saitoh et al [4] examined the relationship between oxygen concentration and conversion efficiency with light-induced degradation and found that oxygen concentration below 1.5 Â 10 17 cm À3 did not cause light-induced degradation. Therefore, control of oxygen concentration in a silicon ingot is important for improving conversion efficiency of a solar cell.…”

Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

“…Oxygen in a silicon ingot enhances the strength of the silicon wafer; however, oxygen forms precipitations [3], dislocations and stacking faults [4]. Furthermore, boronoxygen complexes cause a serious problem of lightinduced degradation in solar cells [5] since they also act as recombination centers of photocarriers. The relationship between oxygen concentration and conversion efficiency with light-induced degradation was reported by Saitoh et al [5].…”

“…Furthermore, boronoxygen complexes cause a serious problem of lightinduced degradation in solar cells [5] since they also act as recombination centers of photocarriers. The relationship between oxygen concentration and conversion efficiency with light-induced degradation was reported by Saitoh et al [5]. They reported that oxygen concentration below 1.5 Â 10 17 cm À3 did not cause light-induced degradation.…”

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

“…For example, high-temperature processes such as phosphorus diffusion, thermal oxidation and annealing can reduce the B-O defect concentration and therefore increase the stable excess carrier lifetime of the silicon [8,13,[74][75][76][77]. However, if inappropriate parameters are used during thermal processing, it is possible to worsen the situation by increasing the defect concentration [72,74].…”