Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Hallam, Brett; Herguth, Axel; Hamer, Phillip; Nampalli, Nitin; Wilking, Svenja; Abbott, Malcolm; Wenham, Stuart; Hahn, Giso

doi:10.3390/app8010010

Cited by 71 publications

(52 citation statements)

References 123 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The IV measurements of the singulated pSPEER cells are performed using a cell tester calibrated with pSPEER cells measured at Fraunhofer ISE CalLab PV Cells. The cells are measured in a stable regenerated condition [21]. Front and rear side measurements are individually performed at G f = 1000 W/m 2 on a non-conducting black background.…”

Section: Resultsmentioning

confidence: 99%

Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

Baliozian

Lohmüller

Fellmeth

et al. 2018

AIP Conference Proceedings

View full text Add to dashboard Cite

Abstract. The concepts of bifaciality and shingling interconnection allow for a boost in output power density pout for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called "p-type shingled passivated edge, emitter, and rear (pSPEER)". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is pout,f = 20.8 mW/cm 2 (equivalent to a peak energy conversion efficiency  = 20.8% under standard test conditions). A total output power density pout = 21.9 mW/cm 2 is attained by assuming an additional rear irradiance of 100 W/m².

show abstract

Section: Resultsmentioning

confidence: 99%

Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

Baliozian

Lohmüller

Fellmeth

et al. 2018

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…Hydrogen in Si is a mobile and highly‐reactive species even at room temperature and saturates dangling bonds at the crystal surface, at dislocations, and at the interface between silicon and silicon oxide . This property has been widely used in the microelectronics and solar cell industry for improving device performance . In addition, recently there has been a renewed interest in H due to contradictory reports that H both suppresses and enhances light‐induced degradation .…”

Section: Introductionmentioning

confidence: 99%

“…This property has been widely used in the microelectronics and solar cell industry for improving device performance . In addition, recently there has been a renewed interest in H due to contradictory reports that H both suppresses and enhances light‐induced degradation . Vacancy‐related defects are fundamental complexes containing dangling bonds.…”

Section: Introductionmentioning

confidence: 99%

Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

Kolevatov

Weiser

Monakhov

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Hydrogen is one of the most important impurities in silicon. It is a mobile and highly reactive species that can passivate dangling bonds at dislocations, surfaces, and interfaces, which has been widely used in the microelectronics and solar cell industry for improving device performance. Vacancy defects are elementary complexes containing dangling bonds, and the study of their interaction with hydrogen is of significant importance. In this work, the interactions of hydrogen with the vacancy‐oxygen complex (VO) and the divacancy (V2) are discussed, which are the most dominant and fundamental vacancy defects stable at room temperature. It is shown that VO and V2 can interact with both atomic and diatomic hydrogen species. This complicates the interpretation of experimental data and results in different reaction paths in differently prepared samples. Besides, some of important electronic properties, particularly electronic levels for V2Hn with n > 1, are not experimentally established.

show abstract

“…Substantial progress has been made recently in developing rapid solutions for BO-LID p-type Cz silicon PERC solar cells suitable for industry. [17] As such, significant reductions in LID from 5% rel to less than 0.5% rel have been demonstrated, resulting in stable efficiencies of >21.5% in mass production. [18] Presumably, the LID in record 23.83% efficient p-type Cz silicon PERC cells with V OCS of 687 mV [19] could be limited to <2% rel degradation, with V OCS of >680 mV.…”

mentioning

confidence: 99%

Large‐Area Boron‐Doped 1.6 Ω cm p‐Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open‐Circuit Voltage of 736 mV and Efficiency of 22.0%

et al. 2020

Self Cite

View full text Add to dashboard Cite

Herein, large‐area defect‐engineered p‐type silicon heterojunction (SHJ) solar cells using standard 1.6 Ω cm commercial‐grade boron‐doped Czochralski (Cz) silicon wafers are fabricated. It is demonstrated that despite achieving an open‐circuit voltage of 735 mV with an efficiency of 21.6% for gettered samples, without appropriate treatment, the cells are heavily susceptible to boron–oxygen‐related light‐induced degradation (LID), with the effective lifetime at maximum power point decreasing to 13 μs. This degradation results in a loss of efficiency of more than 3.1%abs (14.3%rel) after 48 h of light soaking. However, the addition of an advanced hydrogenation postcell fabrication process increases the efficiency by 0.2%abs to 21.8%, and dramatically reduces susceptibility of LID, decreasing the extent of degradation to 0.2%abs (0.9%rel). A peak stable independently measured efficiency of 22.0% with an open‐circuit voltage (VOC) of 736 mV is achieved with the addition of a dedicated high‐temperature prefabrication hydrogenation. These results indicate that p‐type Cz wafers can be used to fabricate stable, next‐generation high‐efficiency solar cells using silicon heterojunctions or other passivated contact architectures requiring VOCS well above 700 mV.

show abstract

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Cited by 71 publications

References 123 publications

Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

Large‐Area Boron‐Doped 1.6 Ω cm p‐Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open‐Circuit Voltage of 736 mV and Efficiency of 22.0%

Contact Info

Product

Resources

About