In this work, we report on hole selective passivating contacts, which consist of a SiOx tunnel layer and an in situ boron‐doped 300 nm thick p+ polysilicon layer deposited by LPCVD. Using a SiNx:H capping layer, we show an extremely low dark saturation current density J0 of 1 fA cm−2 after contact firing. At the same time, we demonstrate that commercially available and screen‐printed fire through Ag pastes are capable of contacting the p+ polysilicon layer, with minimum contact resistance ρc = 2 mΩ cm2. We do find increased interface recombination below the metal contacts of around 250 fA cm−2, which represents a considerable advance compared to conventional screen printed metallisation on diffused junctions.
This article introduces a postmetallization "passivated edge technology" (PET) treatment for separated silicon solar cells consisting of aluminum oxide deposition with subsequent annealing. We present our work on bifacial shingle solar cells that are based on the passivated emitter and rear cell concept. To separate the shingle devices after metallization and firing, we use either a conventional laser scribing mechanical cleaving (LSMC) process or a thermal laser separation (TLS) process. Both separation processes show similar pseudo fill factor (pFF) drops of − 1.2% abs from the host wafer to the separated state. The pFF of the TLSseparated cells increases by up to +0.7% abs from the as-separated state after PET treatment due to edge passivation, while the pFF of LSMC-separated cells increases by up to +0.3% abs. On cell level, the combination of TLS and PET allows for a designated area output power density of p out = 23.5 mW/cm², taking into account an additional 10% rear side irradiance.
Fast and accurate simulation tools are key in increasing our understanding of silicon based solar cells. A lucid graphical unit interface and experimentally obtained input parameters help make these tools accessible for a wide range of users. In this work, we present a fast Excel tool based on the wellknown two-diode-model supporting conventional and metal wrapthrough cell architectures. The selective emitter approach, spatial varying emitter recombination and optical simulations are taken into account. A set of consistent input parameters including the emitter recombination in the passivated case, as well as the metalcontacted for both idealities are given as a function of the emitter sheet resistance. This set on input parameters is associated to industrial related technologies for conventional and metal wrapthrough silicon solar cells.
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