Analytical Modeling of Industrial-Related Silicon Solar Cells

Fellmeth, Tobias; Clement, Florian; Biro, Daniel

doi:10.1109/jphotov.2013.2281105

Cited by 37 publications

(24 citation statements)

References 30 publications

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“…The dark saturation current density from diode 1,

j_{o 1} ([], \frac{m A}{c m^{2}})

, represents the electron‐hole recombination produced at the emitter, bulk, and rear regions of the solar cell. Thus, it can be defined by Equation in which the metallization influence is taken into account (similar to Fellmeth et al):

j_{o 1} = false(1 - F_{M_f} false) \cdot j_{o 1_n^{+}} + F_{M_f} \cdot j_{o 1_n^{+}_m e t} + j_{o 1_b} + j_{o 1_r},

where F M _ f is the metallization fraction at the front side of the solar cell due to the front fingers and front busbars (contacting busbars are assumed).

j_{o 1_n^{+}} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the emitter,

j_{o 1_n^{+}_m e t} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution at the emitter‐metal interface,

j_{o 1_b} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the base (due to its low value, the j o 1_ b term will be neglected in this paper), and

j_{o 1_r} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the rear side.…”

Section: Modelling and Estimation Of The Cell And Module Performancementioning

confidence: 99%

“…With respect to the the dark saturation current from diode 2 (two‐diode model), j o 2 represents the recombination losses that occur at the depletion region and can be estimated in a similar way as done for j o 1 (similar to Fellmeth et al):

\begin{matrix} right j_{o 2} & left = (1 - F_{M_f}) \cdot j_{o 2_n^{+}} + F_{M_f} \cdot j_{o 2_f_m e t} & right \\ right & left + (1 - F_{M_r}) \cdot j_{o 2_p^{+}} \cdot α_{b i} + F_{M_r} \cdot j_{o 2_r_m e t} \cdot α_{b i}, \end{matrix}

being

j_{o 2_n^{+}} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the emitter,

j_{o 2_f_m e t} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the front metal contacts,

j_{o 2_p^{+}} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the rear p + layer, and

j_{o 2_f_m e t} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the rear metal contacts. The variables

j_{o 2_p^{+}}

and j o 2_ f _ m e t are only considered when dealing with the bifacial technology.…”

Section: Modelling and Estimation Of The Cell And Module Performancementioning

confidence: 99%

See 1 more Smart Citation

PV‐GO: A multiobjective and robust optimization approach for the grid metallization design of Si‐based solar cells and modules

Rodríguez-Gallegos

Singh

Ali

et al. 2018

Progress in Photovoltaics

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This paper proposes a new optimization approach for the metallization design of solar cells and modules. While previous works have only optimized a maximum of two parameters at a time (which might lead to the loss of the optimal solution), we developed a graphic user interface tool in MATLAB called Photovoltaic Grid Optimizer (PV‐GO) which is able to optimize several parameters in parallel (fingers, busbars, silver pads, and ribbons) with the objectives to enhance the efficiency of the solar cell/module and to reduce the silver consumption. The fabrication cost is subsequently estimated. Two multiobjective optimization algorithms are used: Non‐dominated Sorting Genetic Algorithm II (NSGA‐II) and Multi‐objective Particle Swarm Optimization (MOPSO) as well as a robust condition to ensure that the results are not severely affected by slight changes on the input parameters. The solar cell/module performance is estimated based on the two‐diode model considering the influence of the optimization variables under standard test conditions (STC). To evaluate our methodology, we present the optimization design for industrial Cz‐Si–based p‐type Al‐BSF monofacial and PERT bifacial, full‐cell (15.6 × 15.6 cm2) and half‐cell (15.6 × 7.8 cm2), solar cells and modules. Our methodology provides an optimal design suitable for different market situations that should be considered by the PV manufactures to enhance their electrical performance and reduce their silver consumption, and ultimately improve their profitability.

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“…The dark saturation current density from diode 1,

j_{o 1} ([], \frac{m A}{c m^{2}})

j_{o 1} = false(1 - F_{M_f} false) \cdot j_{o 1_n^{+}} + F_{M_f} \cdot j_{o 1_n^{+}_m e t} + j_{o 1_b} + j_{o 1_r},

where F M _ f is the metallization fraction at the front side of the solar cell due to the front fingers and front busbars (contacting busbars are assumed).

j_{o 1_n^{+}} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the emitter,

j_{o 1_n^{+}_m e t} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution at the emitter‐metal interface,

j_{o 1_b} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the base (due to its low value, the j o 1_ b term will be neglected in this paper), and

j_{o 1_r} ([], \frac{m A}{c m^{2}})

is the j o 1 contribution from the rear side.…”

Section: Modelling and Estimation Of The Cell And Module Performancementioning

confidence: 99%

\begin{matrix} right j_{o 2} & left = (1 - F_{M_f}) \cdot j_{o 2_n^{+}} + F_{M_f} \cdot j_{o 2_f_m e t} & right \\ right & left + (1 - F_{M_r}) \cdot j_{o 2_p^{+}} \cdot α_{b i} + F_{M_r} \cdot j_{o 2_r_m e t} \cdot α_{b i}, \end{matrix}

being

j_{o 2_n^{+}} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the emitter,

j_{o 2_f_m e t} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the front metal contacts,

j_{o 2_p^{+}} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the rear p + layer, and

j_{o 2_f_m e t} ([], \frac{m A}{c m^{2}})

the j o 2 contribution from the rear metal contacts. The variables

j_{o 2_p^{+}}

and j o 2_ f _ m e t are only considered when dealing with the bifacial technology.…”

Section: Modelling and Estimation Of The Cell And Module Performancementioning

confidence: 99%

PV‐GO: A multiobjective and robust optimization approach for the grid metallization design of Si‐based solar cells and modules

Rodríguez-Gallegos

Singh

Ali

et al. 2018

Progress in Photovoltaics

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show abstract

“…In order to estimate the suitability of flexographic printing for the metallization of multi-busbar solar cells, the contribution of the contact fingers to the total series resistance r s of virtually flexo printed multi-busbar solar cells has been calculated according to the following equation which is based on [22]: ( 3 ) whereby R L represents the lateral finger resistance in Ω/m, l f the half length of the finger segments in between the busbars, P the finger pitch and w BB the width of the busbar wires (all in m). The calculation has been carried out for typical lateral resistances of flexo printed fingers which have been achieved in the experiment (R L = 500-1500 Ω/m).…”

Section: Calculation Of Finger Contribution To Series Resistance and mentioning

confidence: 99%

Evaluation of Flexographic Printing Technology for Multi-busbar Solar Cells

Lorenz

Senne²,

Rohde³

et al. 2015

Energy Procedia

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Rotational flexographic printing is a promising high-throughput technology for the front side metallization of silicon solar cells. Very low silver consumption and the possibility to realize narrow contact fingers make this technology particularly interesting for multi-busbar solar cells. Within this work, fundamental printing tests have been carried out on a flexographic roll-to-flat machine using an experimental anilox roll and elastomeric laser-engraved printing plates. A double printing process with intermediate drying step has been applied. Contact fingers down to 33 μm in width and up to 8 μm in height have been realized using this technology. Lateral resistances in the range 500 to 1500 Ω/m have been determined by four point measurement method. These results underline the capability of flexographic printing for fine line metallization of multi-busbar solar cells.

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“…The contribution of the front-side grid to the total series resistance of the solar cell r s,grid can be calculated according to [13] with known number of busbars n BB , number of current pins contacting one busbar n PinsBB , width and height of the busbar w BB and h BB , finger pitch P, specific resistance of the busbar ρ BB , as well as width w c and length l c of the cell…”

Section: Electrical Characterization Of Contact Fingersmentioning

confidence: 99%

Impact of Texture Roughness on the Front-Side Metallization of Stencil-Printed Silicon Solar Cells

Lorenz

Strauch

Demant

et al. 2015

IEEE J. Photovoltaics

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Realizing narrow contact fingers with low lateral resistance is a major goal for the front-side metallization of silicon solar cells. The formation of screen-or stencil-printed contact fingers is governed by a variety of influencing factors. One of these factors is the surface roughness of the textured silicon wafer. However, only a few investigations have been carried out to investigate this impact in detail. In this study, the influence of arithmetical mean roughness R a of four differently textured wafer surfaces on contact finger geometry and lateral finger resistance, as well as optical and electrical losses, has been investigated. It will be shown that texture roughness has a considerable impact on the properties of the front-side grid. Narrower contact fingers could be realized on the smoothest texture, leading to a current density gain of Δj sc = +0.27 mA/cm 2 . On the other hand, increasing texture roughness has affected the amount of transferred paste and, thus, has led to a lower lateral finger resistance R L . Thus, contact fingers on the roughest texture have benefited from a fill factor gain of ΔFF = +0.24 % ab s . A sensitivity analysis of both impacts has shown that the current density gain has overcompensated the fill factor loss. Thus, textures with a small roughness are beneficial with respect to the formation and electrical properties of stencil-printed front-side grids.

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Analytical Modeling of Industrial-Related Silicon Solar Cells

Cited by 37 publications

References 30 publications

PV‐GO: A multiobjective and robust optimization approach for the grid metallization design of Si‐based solar cells and modules

PV‐GO: A multiobjective and robust optimization approach for the grid metallization design of Si‐based solar cells and modules

Evaluation of Flexographic Printing Technology for Multi-busbar Solar Cells

Impact of Texture Roughness on the Front-Side Metallization of Stencil-Printed Silicon Solar Cells

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