Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

Numerical analysis of light elements transport in a unidirectional solidification furnace

“…The average amount of SiO g concentration in the gas phase is 10 -9 mol/cm 3 and the maximum concentration is about 10 -8 mol/cm 3 , which are almost the same as the simulation results of Smirnov and Kalaev [10] in a Czochralski furnace. The average amount of oxygen atom concentration in the melt is 10 17 atom/cm 3 , which is consistent with the experimental result reported by Matsuo et al [18]. The concentration of SiO is large in the top half of the furnace and small in the bottom half of the furnace.…”

Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process

“…Considering the chemical reaction that occurs at the interface between the quartz crucible and the silicon nitride (Si 3 N 4 ) coating (Si 3 N 4(s) + 3SiO 2(s) 26SiO (g) +2N 2(g) ) and that occurring at the interface between the Si 3 N 4 liner and the silicon melt (SiO (g) 2Si (l) +O (l) ), the equilibrium oxygen concentration C O on the Si 3 N 4 linear surface immersed in the silicon melt can be expressed in the following form [18]:…”

Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells

“…(a) On the quartz crucible wall, reaction (1) occurs and the equilibrium concentration of oxygen atoms is expressed as [10] c 0 ¼ 0:5 Â 10 23 Â a 1Àa atom=cm 3 ,…”